Low dislocation density, high power InGaN laser diodes

We used single crystals of GaN, obtained from high-pressure synthesis, as substrates for Metalorganics Vapor Phase Epitaxy growth of violet and UV laser diodes. The use of high-quality bulk GaN leads to the decrease of the dislocation density to the low level of 10(5) cm-2, i.e. two orders of magnit...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	MRS Internet journal of nitride semiconductor research 2004-01, Vol.9, p.1-1, Article e3
Hauptverfasser:	Perlin, Piotr, Leszczynski, M, Prystawko, P, Wisniewski, P, Czernetzki, R, Skierbiszewski, C, Nowak, G, Purgal, W, Weyher, J L, Kamler, G, Borysiuk, J, Krysko, M, Sarzynski, M, Suski, T, Litwin-Staszewska, E, Dmowski, L, Franssen, G, Grzanka, S, Swietlik, T
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!