Comparison of electrical and SEM CD measurements on binary and alternating aperture phase-shifting masks
Many of the recent advances in optical lithography have been driven by the utilization of complex photomasks using optical proximity correction (OPC) or phase-shifting technologies. These masks are difficult and expensive to manufacture so the ability to test and characterize the mask making process...
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| Veröffentlicht in: | IEEE transactions on semiconductor manufacturing 2003-05, Vol.16 (2), p.266-272 |
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| container_title | IEEE transactions on semiconductor manufacturing |
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| creator | Smith, S. McCallum, M. Walton, A.J. Stevenson, J.T.M. Lissimore, A. |
| description | Many of the recent advances in optical lithography have been driven by the utilization of complex photomasks using optical proximity correction (OPC) or phase-shifting technologies. These masks are difficult and expensive to manufacture so the ability to test and characterize the mask making process is very important. This paper examines the issues involved in the use of relatively low-cost electrical critical dimension (ECD) measurement of mask features. Modified cross-bridge test structures have been designed to allow the on-mask measurement of dense and isolated, binary and phase-shifted layouts. The results of electrical and critical dimension scanning electron microscope (CD-SEM) testing of these structures are presented and indicate the lower variability associated with ECD measurements. In particular the adverse effect of phase-shifting elements on the accuracy of SEM measurements is highlighted. |
| doi_str_mv | 10.1109/TSM.2003.811897 |
| format | Article |
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These masks are difficult and expensive to manufacture so the ability to test and characterize the mask making process is very important. This paper examines the issues involved in the use of relatively low-cost electrical critical dimension (ECD) measurement of mask features. Modified cross-bridge test structures have been designed to allow the on-mask measurement of dense and isolated, binary and phase-shifted layouts. The results of electrical and critical dimension scanning electron microscope (CD-SEM) testing of these structures are presented and indicate the lower variability associated with ECD measurements. 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These masks are difficult and expensive to manufacture so the ability to test and characterize the mask making process is very important. This paper examines the issues involved in the use of relatively low-cost electrical critical dimension (ECD) measurement of mask features. Modified cross-bridge test structures have been designed to allow the on-mask measurement of dense and isolated, binary and phase-shifted layouts. The results of electrical and critical dimension scanning electron microscope (CD-SEM) testing of these structures are presented and indicate the lower variability associated with ECD measurements. In particular the adverse effect of phase-shifting elements on the accuracy of SEM measurements is highlighted.</description><subject>Apertures</subject><subject>Applied sciences</subject><subject>Cadmium</subject><subject>Dimensional measurements</subject><subject>Electric variables measurement</subject><subject>Electrical resistance measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Lithography</subject><subject>Masks</subject><subject>Metrology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Optical filters</subject><subject>Phase measurement</subject><subject>Process control</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Testing</subject><subject>Ultra large scale integration</subject><subject>Utilization</subject><issn>0894-6507</issn><issn>1558-2345</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkb1PHDEQxa0okXIhqSloLKSQao-x117bZXQQEgmUAqhXPjPmDPsVz16R_x4fh4REkVQjeX7zZvweY4cClkKAO725vlpKgHpphbDOvGMLobWtZK30e7YA61TVaDAf2SeiBwChlDMLtlmN_eRzonHgY-TYYZhzCr7jfrjj1-dXfHXGe_S0zdjjMBMv4DoNPv99Jnw3Yx78nIZ77ifMc-H4tPGEFW1SfH7vPT3SZ_Yh-o7wy0s9YLc_zm9WP6vL3xe_Vt8vq6AEzJUUrnxGOSjnKRVEjU7IRjuBSkut9DoaE-IarQ_NHRhsAGJsVDTCyGBdqA_Yt73ulMc_W6S57RMF7Do_4Lil1kEhFShZyJN_ktIVjxqr_w9aKawWO8XjN-DDuC3udGWtlNpAXasCne6hkEeijLGdcuqLn62AdpdkW5Jsd0m2-yTLxNcXWU8lmZj9EBK9jiljpWx264_2XELE17ZwFmpXPwEP5qUU</recordid><startdate>20030501</startdate><enddate>20030501</enddate><creator>Smith, S.</creator><creator>McCallum, M.</creator><creator>Walton, A.J.</creator><creator>Stevenson, J.T.M.</creator><creator>Lissimore, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductors</topic><topic>Testing</topic><topic>Ultra large scale integration</topic><topic>Utilization</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Smith, S.</creatorcontrib><creatorcontrib>McCallum, M.</creatorcontrib><creatorcontrib>Walton, A.J.</creatorcontrib><creatorcontrib>Stevenson, J.T.M.</creatorcontrib><creatorcontrib>Lissimore, A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><jtitle>IEEE transactions on semiconductor manufacturing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Smith, S.</au><au>McCallum, M.</au><au>Walton, A.J.</au><au>Stevenson, J.T.M.</au><au>Lissimore, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of electrical and SEM CD measurements on binary and alternating aperture phase-shifting masks</atitle><jtitle>IEEE transactions on semiconductor manufacturing</jtitle><stitle>TSM</stitle><date>2003-05-01</date><risdate>2003</risdate><volume>16</volume><issue>2</issue><spage>266</spage><epage>272</epage><pages>266-272</pages><issn>0894-6507</issn><eissn>1558-2345</eissn><coden>ITSMED</coden><abstract>Many of the recent advances in optical lithography have been driven by the utilization of complex photomasks using optical proximity correction (OPC) or phase-shifting technologies. 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| identifier | ISSN: 0894-6507 |
| ispartof | IEEE transactions on semiconductor manufacturing, 2003-05, Vol.16 (2), p.266-272 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Apertures Applied sciences Cadmium Dimensional measurements Electric variables measurement Electrical resistance measurement Electronics Exact sciences and technology Lithography Masks Metrology Microelectronic fabrication (materials and surfaces technology) Optical filters Phase measurement Process control Scanning electron microscopy Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Testing Ultra large scale integration Utilization |
| title | Comparison of electrical and SEM CD measurements on binary and alternating aperture phase-shifting masks |
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