Growth of high-quality In-rich InGaN alloys by RF–MBE for the fabrication of InN-based quantum well structures

This paper describes studies performed for improving the quality of In-rich In x Ga 1− x N alloys. The crystalline quality and surface morphology of In-rich In x Ga 1− x N films was improved by using InN templates as underlying layers. It was also found that the crystalline quality of In-rich In x G...

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Veröffentlicht in:Journal of crystal growth 2006-03, Vol.288 (2), p.283-288
Hauptverfasser: Naoi, Hiroyuki, Kurouchi, Masahito, Muto, Daisuke, Araki, Tsutomu, Miyajima, Takao, Nanishi, Yasushi
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Sprache:eng
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