Gate stack technology for nanoscale devices

Scaling of the gate stack has been a key to enhancing the performance of complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) of past technology generations. Because the rate of gate stack scaling has diminished in recent years, the motivation for alternative gate stacks or...

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Veröffentlicht in:	Materials today (Kidlington, England) England), 2006-06, Vol.9 (6), p.32-40
Hauptverfasser:	Lee, Byoung Hun, Oh, Jungwoo, Tseng, Hsing Huang, Jammy, Rajarao, Huff, Howard
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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