Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

The full silicidation of silicon gate electrodes using Ni-Tb alloy was investigated for metal oxide semiconductor field effect transistor (MOSFET) applications. Results showed that a dual-layer silicide gate consisting of a top NiTb silicide layer and a bottom NiSi layer was formed. Full silicidatio...

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Veröffentlicht in:	Journal of the Electrochemical Society 2006-01, Vol.153 (4), p.G337-G340
Hauptverfasser:	Lim, Andy Eu-Jin, Lee, Rinus Tek Po, Tung, Chih Hung, Tripathy, S., Kwong, Dim-Lee, Yeo, Yee-Chia
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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