Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

The full silicidation of silicon gate electrodes using Ni-Tb alloy was investigated for metal oxide semiconductor field effect transistor (MOSFET) applications. Results showed that a dual-layer silicide gate consisting of a top NiTb silicide layer and a bottom NiSi layer was formed. Full silicidatio...

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Veröffentlicht in:Journal of the Electrochemical Society 2006-01, Vol.153 (4), p.G337-G340
Hauptverfasser: Lim, Andy Eu-Jin, Lee, Rinus Tek Po, Tung, Chih Hung, Tripathy, S., Kwong, Dim-Lee, Yeo, Yee-Chia
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container_end_page G340
container_issue 4
container_start_page G337
container_title Journal of the Electrochemical Society
container_volume 153
creator Lim, Andy Eu-Jin
Lee, Rinus Tek Po
Tung, Chih Hung
Tripathy, S.
Kwong, Dim-Lee
Yeo, Yee-Chia
description The full silicidation of silicon gate electrodes using Ni-Tb alloy was investigated for metal oxide semiconductor field effect transistor (MOSFET) applications. Results showed that a dual-layer silicide gate consisting of a top NiTb silicide layer and a bottom NiSi layer was formed. Full silicidation using Nio BTbo 2 resulted in a gate work function of 4.41 eV. This is lower than a work function of 4.68 eV obtained from full Ni silicidation. The work function lowering was linked to structural changes in the underlying NiSi layer. No physical or electrical degradation was observed after forming gas annealing at 420DGC for 30 min. NiTb-silicided gate electrodes have work functions suitable for application in advanced transistor structures.
doi_str_mv 10.1149/1.2171827
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