Characteristics of back-illuminated visible-blind UV photodetector based on AlxGa1-xN p-i-n photodiodes

In this work, we reported the growth, fabrication and characterization of an AlxGa1-xN heteroepitaxial back-illuminated visible-blind UV photodetector designed for flip-chip mounting. This device was grown on one side of a polished sapphire substrate using a low-temperature AlN buffer layer created...

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Veröffentlicht in:	Journal of crystal growth 2005-04, Vol.276 (3-4), p.367-373
Hauptverfasser:	CHAE, Kyong-Seok, KIM, Dong-Wook, KIM, Bong-Soo, SOM, Sung-Jin, LEE, In-Hwan, LEE, Cheul-Ro
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Photodetectors (including infrared and CCD detectors) Photodiodes phototransistors photoresistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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