Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma process

A ternary barrier film TiSiN was prepared by low frequency, high density inductively coupled plasma (ICP) implantation of N into TiSi substrate. This leads to the formation of Ti–N and Si–N compounds in the ternary film. Using this technique, 5–20-nm-thick TiSiN films were successfully grown over di...

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Veröffentlicht in:	Surface & coatings technology 2005-08, Vol.198 (1), p.291-295
Hauptverfasser:	Ee, Y.C., Chen, Z., Wang, W.D., Chi, D.Z., Xu, S., Law, S.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Cu metallization Diffusion Exact sciences and technology Materials science Other topics in materials science Physics Plasma implantation TiSiN barrier
Online-Zugang:	Volltext
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