Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth

Selective nitrogen doping of 4H-SiC by epitaxial growth using TaC as the high temperature mask has been demonstrated. Nomarski optical microscope and scanning electron microscope (SEM) were used to characterize selective growth of SiC. In addition, 250µm square shaped p-n junction diodes by selectiv...

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Veröffentlicht in:	Materials Science Forum 2005-05, Vol.483-485, p.159-162
Hauptverfasser:	Li, Can Hua, Chow, T. Paul, Losee, Peter A., Bhat, I., Seiler, Joseph
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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