Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay

Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay

A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times...

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Veröffentlicht in:Materials Science Forum 2005-05, Vol.483-485, p.405-408
Hauptverfasser: Bhat, I., Chow, T. Paul, Seiler, Joseph, Gutmann, Ronald J., Kumar, R.J., Losee, Peter A., Borrego, J.M., Li, Can Hua
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container_title Materials Science Forum
container_volume 483-485
creator Bhat, I.
Chow, T. Paul
Seiler, Joseph
Gutmann, Ronald J.
Kumar, R.J.
Losee, Peter A.
Borrego, J.M.
Li, Can Hua
description A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29114809</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29114809</sourcerecordid><originalsourceid>FETCH-LOGICAL-c301t-aa723ac17ace1fc2858d5a481685b3f2667afa2d8467594286b7dfb4a9fb1de13</originalsourceid><addsrcrecordid>eNqVkE1rGzEQQEWbQt3E_2FPPRTWkbT62mPjfDjgUIObs5jVSljGWTmSbGfz66viQs49DHN5PGYeQj8InjFM1fXpdJol4-2QvfNmNth8_bS-nzHV1EzxwvBPaEKEoHUrOf2Mpq1UWEnF2lY09AJNMOW85kyKr-hbSluMG6KImKDVfAMRTLbRv0P2YaiCq9iiXvt5dbf3Gd487KoljDamqhurJ29iOMHRVqtNyMGEoT-Y7I8-j9WtNTBeoS8OdslO_-1L9Hx_93u-qJe_Hh7nP5e1aTDJNYCkDRgiwVjiDFVc9RxYuUnxrnFUCAkOaK-YkLxlVIlO9q5j0LqO9JY0l-j72buP4fVgU9YvPhm728FgwyFp2hLCFG4LeHMGy-EpRev0PvoXiKMmWP-Nq0tc_RFXl7i6xNUlbhleGF4kt2dJjjCkbM1Gb8MhDuXD_9H8AabQi84</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29114809</pqid></control><display><type>article</type><title>Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay</title><source>Scientific.net Journals</source><creator>Bhat, I. ; Chow, T. Paul ; Seiler, Joseph ; Gutmann, Ronald J. ; Kumar, R.J. ; Losee, Peter A. ; Borrego, J.M. ; Li, Can Hua</creator><creatorcontrib>Bhat, I. ; Chow, T. Paul ; Seiler, Joseph ; Gutmann, Ronald J. ; Kumar, R.J. ; Losee, Peter A. ; Borrego, J.M. ; Li, Can Hua</creatorcontrib><description>A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>ISBN: 9780878499632</identifier><identifier>ISBN: 0878499636</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.483-485.405</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials Science Forum, 2005-05, Vol.483-485, p.405-408</ispartof><rights>2005 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c301t-aa723ac17ace1fc2858d5a481685b3f2667afa2d8467594286b7dfb4a9fb1de13</citedby><cites>FETCH-LOGICAL-c301t-aa723ac17ace1fc2858d5a481685b3f2667afa2d8467594286b7dfb4a9fb1de13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/513?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Bhat, I.</creatorcontrib><creatorcontrib>Chow, T. Paul</creatorcontrib><creatorcontrib>Seiler, Joseph</creatorcontrib><creatorcontrib>Gutmann, Ronald J.</creatorcontrib><creatorcontrib>Kumar, R.J.</creatorcontrib><creatorcontrib>Losee, Peter A.</creatorcontrib><creatorcontrib>Borrego, J.M.</creatorcontrib><creatorcontrib>Li, Can Hua</creatorcontrib><title>Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay</title><title>Materials Science Forum</title><description>A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><isbn>9780878499632</isbn><isbn>0878499636</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqVkE1rGzEQQEWbQt3E_2FPPRTWkbT62mPjfDjgUIObs5jVSljGWTmSbGfz66viQs49DHN5PGYeQj8InjFM1fXpdJol4-2QvfNmNth8_bS-nzHV1EzxwvBPaEKEoHUrOf2Mpq1UWEnF2lY09AJNMOW85kyKr-hbSluMG6KImKDVfAMRTLbRv0P2YaiCq9iiXvt5dbf3Gd487KoljDamqhurJ29iOMHRVqtNyMGEoT-Y7I8-j9WtNTBeoS8OdslO_-1L9Hx_93u-qJe_Hh7nP5e1aTDJNYCkDRgiwVjiDFVc9RxYuUnxrnFUCAkOaK-YkLxlVIlO9q5j0LqO9JY0l-j72buP4fVgU9YvPhm728FgwyFp2hLCFG4LeHMGy-EpRev0PvoXiKMmWP-Nq0tc_RFXl7i6xNUlbhleGF4kt2dJjjCkbM1Gb8MhDuXD_9H8AabQi84</recordid><startdate>20050515</startdate><enddate>20050515</enddate><creator>Bhat, I.</creator><creator>Chow, T. Paul</creator><creator>Seiler, Joseph</creator><creator>Gutmann, Ronald J.</creator><creator>Kumar, R.J.</creator><creator>Losee, Peter A.</creator><creator>Borrego, J.M.</creator><creator>Li, Can Hua</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20050515</creationdate><title>Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay</title><author>Bhat, I. ; Chow, T. Paul ; Seiler, Joseph ; Gutmann, Ronald J. ; Kumar, R.J. ; Losee, Peter A. ; Borrego, J.M. ; Li, Can Hua</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c301t-aa723ac17ace1fc2858d5a481685b3f2667afa2d8467594286b7dfb4a9fb1de13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bhat, I.</creatorcontrib><creatorcontrib>Chow, T. Paul</creatorcontrib><creatorcontrib>Seiler, Joseph</creatorcontrib><creatorcontrib>Gutmann, Ronald J.</creatorcontrib><creatorcontrib>Kumar, R.J.</creatorcontrib><creatorcontrib>Losee, Peter A.</creatorcontrib><creatorcontrib>Borrego, J.M.</creatorcontrib><creatorcontrib>Li, Can Hua</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials Science Forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bhat, I.</au><au>Chow, T. Paul</au><au>Seiler, Joseph</au><au>Gutmann, Ronald J.</au><au>Kumar, R.J.</au><au>Losee, Peter A.</au><au>Borrego, J.M.</au><au>Li, Can Hua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay</atitle><jtitle>Materials Science Forum</jtitle><date>2005-05-15</date><risdate>2005</risdate><volume>483-485</volume><spage>405</spage><epage>408</epage><pages>405-408</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><isbn>9780878499632</isbn><isbn>0878499636</isbn><abstract>A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.483-485.405</doi><tpages>4</tpages></addata></record>
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url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T06%3A33%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Characterization%20of%204H-SiC%20Epitaxial%20Layers%20by%20Microwave%20Photoconductivity%20Decay&rft.jtitle=Materials%20Science%20Forum&rft.au=Bhat,%20I.&rft.date=2005-05-15&rft.volume=483-485&rft.spage=405&rft.epage=408&rft.pages=405-408&rft.issn=0255-5476&rft.eissn=1662-9752&rft.isbn=9780878499632&rft.isbn_list=0878499636&rft_id=info:doi/10.4028/www.scientific.net/MSF.483-485.405&rft_dat=%3Cproquest_cross%3E29114809%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29114809&rft_id=info:pmid/&rfr_iscdi=true