Ab initio FP-LAPW study of the semiconductors SnO and SnO2
Structural and electronic properties of tin oxides, SnO and SnO2, were studied using the full-potential linearized-augmented-plane-waves method within the local density and the generalized gradient approximations. Internal positional parameters, density of states and the electric-field gradient tens...
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Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2007-02, Vol.389 (1), p.140-144 |
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Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Structural and electronic properties of tin oxides, SnO and SnO2, were studied using the full-potential linearized-augmented-plane-waves method within the local density and the generalized gradient approximations. Internal positional parameters, density of states and the electric-field gradient tensor at Sn sites were calculated. The results for the electronic and structural properties are compared to experimental measurements and with results obtained in different band-structure calculations. |
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ISSN: | 0921-4526 1873-2135 |
DOI: | 10.1016/j.physb.2006.07.041 |