Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide

Semiconducting graphene plays an important part in graphene nanoelectronics because of the lack of an intrinsic bandgap in graphene 1 . In the past two decades, attempts to modify the bandgap either by quantum confinement or by chemical functionalization failed to produce viable semiconducting graph...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Nature (London) 2024-01, Vol.625 (7993), p.60-65
Hauptverfasser:	Zhao, Jian, Ji, Peixuan, Li, Yaqi, Li, Rui, Zhang, Kaimin, Tian, Hao, Yu, Kaicheng, Bian, Boyue, Hao, Luzhen, Xiao, Xue, Griffin, Will, Dudeck, Noel, Moro, Ramiro, Ma, Lei, de Heer, Walt A.
Format:	Artikel
Sprache:	eng
Schlagworte:	639/925 639/925/918 Annealing Buffer layers Crystal surfaces Energy gap Fabrication Graphene Humanities and Social Sciences Low dimensional semiconductors Methods multidisciplinary Nanoelectronics Polymers Quantum confinement Room temperature Science Science (multidisciplinary) Semiconductors Silicon Silicon carbide Silicon substrates Single crystals Temperature
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!