Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field
Two hundred millimeter single crystals with various oxygen concentrations are grown in the cusp-magnetic Czochralski method, and the effects of heating condition (which corresponds to different crucible positions with the fixed heater), the seed rotation and argon flow rate on the oxygen concentrati...
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Veröffentlicht in: | Journal of crystal growth 2005-03, Vol.275 (3), p.455-459 |
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container_title | Journal of crystal growth |
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creator | Sim, Bok-Cheol Lee, In-Kyoo Kim, Kwang-Hun Lee, Hong-Woo |
description | Two hundred millimeter single crystals with various oxygen concentrations are grown in the cusp-magnetic Czochralski method, and the effects of heating condition (which corresponds to different crucible positions with the fixed heater), the seed rotation and argon flow rate on the oxygen concentration and its distribution in the crystal are experimentally investigated. The oxygen concentration decreases with increasing melt level because of lower temperature at the bottom of the crucible. The oxygen radial gradients are less than 2%. Oxygen concentration decreases as the argon flow rate increases. Large single crystal with the extremely low oxygen concentrations is possible in the Czochralski method. |
doi_str_mv | 10.1016/j.jcrysgro.2004.12.037 |
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The oxygen concentration decreases with increasing melt level because of lower temperature at the bottom of the crucible. The oxygen radial gradients are less than 2%. Oxygen concentration decreases as the argon flow rate increases. Large single crystal with the extremely low oxygen concentrations is possible in the Czochralski method.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2004.12.037</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Magnetic field ; A1. Oxygen concentration ; A2. Czochralski method ; B2. 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The oxygen concentration decreases with increasing melt level because of lower temperature at the bottom of the crucible. The oxygen radial gradients are less than 2%. Oxygen concentration decreases as the argon flow rate increases. Large single crystal with the extremely low oxygen concentrations is possible in the Czochralski method.</description><subject>A1. Magnetic field</subject><subject>A1. Oxygen concentration</subject><subject>A2. Czochralski method</subject><subject>B2. Semiconducting silicon</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Growth from melts; zone melting and refining</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkM1OAyEURonRxFp9BTMb3c14Lwwz052m8S9p0o2uCWWgpU6ZCtRan16aaly6gQTOd7_cQ8glQoGA1c2yWCq_C3PfFxSgLJAWwOojMsCmZjkHoMdkkE6aAy2bU3IWwhIgJREGZDr93M21y1TvlHbRy2h7l1mXxYXOxl-9WnjZhTebp_HbhKWimB6yrY2LTG3COl_JudPRqsxY3bXn5MSkf33xcw_J68P9y_gpn0wfn8d3k1yxmsWczhgrqxmDGRrgzahkkmLNsSolbziiqkuOpqbMVKyEUc1ZabRhukUELmtkQ3J9mLv2_ftGhyhWNijdddLpfhMEHaVUxfZgdQCV70Pw2oi1tyvpdwJB7P2Jpfj1J_b-BFKR_KXg1U-DDEp2xkunbPhLVxUibyBxtwdOp3U_rPYiKKuTzdZ6raJoe_tf1TeFqIlC</recordid><startdate>20050301</startdate><enddate>20050301</enddate><creator>Sim, Bok-Cheol</creator><creator>Lee, In-Kyoo</creator><creator>Kim, Kwang-Hun</creator><creator>Lee, Hong-Woo</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050301</creationdate><title>Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field</title><author>Sim, Bok-Cheol ; Lee, In-Kyoo ; Kim, Kwang-Hun ; Lee, Hong-Woo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-2b3346b30b1f058943a2175164a58511c7451f723f634097534fef3ed1105a713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>A1. Magnetic field</topic><topic>A1. Oxygen concentration</topic><topic>A2. Czochralski method</topic><topic>B2. Semiconducting silicon</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Growth from melts; zone melting and refining</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sim, Bok-Cheol</creatorcontrib><creatorcontrib>Lee, In-Kyoo</creatorcontrib><creatorcontrib>Kim, Kwang-Hun</creatorcontrib><creatorcontrib>Lee, Hong-Woo</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sim, Bok-Cheol</au><au>Lee, In-Kyoo</au><au>Kim, Kwang-Hun</au><au>Lee, Hong-Woo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field</atitle><jtitle>Journal of crystal growth</jtitle><date>2005-03-01</date><risdate>2005</risdate><volume>275</volume><issue>3</issue><spage>455</spage><epage>459</epage><pages>455-459</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Two hundred millimeter single crystals with various oxygen concentrations are grown in the cusp-magnetic Czochralski method, and the effects of heating condition (which corresponds to different crucible positions with the fixed heater), the seed rotation and argon flow rate on the oxygen concentration and its distribution in the crystal are experimentally investigated. The oxygen concentration decreases with increasing melt level because of lower temperature at the bottom of the crucible. The oxygen radial gradients are less than 2%. Oxygen concentration decreases as the argon flow rate increases. Large single crystal with the extremely low oxygen concentrations is possible in the Czochralski method.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2004.12.037</doi><tpages>5</tpages></addata></record> |
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subjects | A1. Magnetic field A1. Oxygen concentration A2. Czochralski method B2. Semiconducting silicon Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Physics |
title | Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field |
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