Interface engineering in ZnO/CdO hybrid nanocomposites to enhanced resistive switching memory for neuromorphic computing

Resistive random-access memory (RRAMs) has attracted significant interest for their potential applications in embedded storage and neuromorphic computing. Materials based on metal chalcogenides have emerged as promising candidates for the fulfilment of these requirements. Due to its ability to manip...

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Veröffentlicht in:	Journal of colloid and interface science 2024-04, Vol.659, p.1-10
Hauptverfasser:	Ghafoor, Faisal, Kim, Honggyun, Ghafoor, Bilal, Rehman, Shania, Asghar Khan, Muhammad, Aziz, Jamal, Rabeel, Muhammad, Faheem Maqsood, Muhammad, Dastgeer, Ghulam, Lee, Myoung-Jae, Farooq Khan, Muhammad, Kim, Deok-Kee
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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