Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers
A numerical electro-thermal model was developed for AlGaAs/GaAs heterojunction bipolar transistors (HBT's) to describe the base current, current gain and output power dependence on junction temperature. The model is applied to microwave HBT devices with multi-emitter fingers. The calculated res...
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| Veröffentlicht in: | IEEE transactions on electron devices 1994-05, Vol.41 (5), p.629-636 |
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| container_title | IEEE transactions on electron devices |
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| creator | Liou, L.L. Bayraktaroglu, B. |
| description | A numerical electro-thermal model was developed for AlGaAs/GaAs heterojunction bipolar transistors (HBT's) to describe the base current, current gain and output power dependence on junction temperature. The model is applied to microwave HBT devices with multi-emitter fingers. The calculated results of the common-emitter, current-voltage characteristics in the linear active region show a "current crush" effect due to inherent nonuniform junction temperature, current density and current gain distribution in the device. The formation of highly localized high temperature regions, i.e., hot spots, occur when the device is operating beyond the current-crush point. This thermally induced current instability imposes an upper limit on the power capability of HBT's. The dependence of this effect on various factors is discussed. These factors include the intrinsic parameters such as the base current ideality factor, the "apparent" valence band discontinuity, and the temperature coefficient of the emitter-base turn-on voltage, as well as the extrinsic factors such as the emitter contact specific resistance, the substrate thermal conductivity and the heat source layout.< > |
| doi_str_mv | 10.1109/16.285008 |
| format | Article |
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The model is applied to microwave HBT devices with multi-emitter fingers. The calculated results of the common-emitter, current-voltage characteristics in the linear active region show a "current crush" effect due to inherent nonuniform junction temperature, current density and current gain distribution in the device. The formation of highly localized high temperature regions, i.e., hot spots, occur when the device is operating beyond the current-crush point. This thermally induced current instability imposes an upper limit on the power capability of HBT's. The dependence of this effect on various factors is discussed. These factors include the intrinsic parameters such as the base current ideality factor, the "apparent" valence band discontinuity, and the temperature coefficient of the emitter-base turn-on voltage, as well as the extrinsic factors such as the emitter contact specific resistance, the substrate thermal conductivity and the heat source layout.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.285008</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electromagnetic heating ; Electronics ; Exact sciences and technology ; Gallium arsenide ; Heterojunction bipolar transistors ; Microwave devices ; Numerical models ; Power generation ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stability analysis ; Temperature dependence ; Thermal conductivity ; Thermal resistance ; Transistors</subject><ispartof>IEEE transactions on electron devices, 1994-05, Vol.41 (5), p.629-636</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-aac6d880dda3f9f72579897b99cfafbd0bdf7a189bfa184184a992a972ff8a293</citedby><cites>FETCH-LOGICAL-c399t-aac6d880dda3f9f72579897b99cfafbd0bdf7a189bfa184184a992a972ff8a293</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/285008$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/285008$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4139268$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liou, L.L.</creatorcontrib><creatorcontrib>Bayraktaroglu, B.</creatorcontrib><title>Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A numerical electro-thermal model was developed for AlGaAs/GaAs heterojunction bipolar transistors (HBT's) to describe the base current, current gain and output power dependence on junction temperature. The model is applied to microwave HBT devices with multi-emitter fingers. The calculated results of the common-emitter, current-voltage characteristics in the linear active region show a "current crush" effect due to inherent nonuniform junction temperature, current density and current gain distribution in the device. The formation of highly localized high temperature regions, i.e., hot spots, occur when the device is operating beyond the current-crush point. This thermally induced current instability imposes an upper limit on the power capability of HBT's. The dependence of this effect on various factors is discussed. These factors include the intrinsic parameters such as the base current ideality factor, the "apparent" valence band discontinuity, and the temperature coefficient of the emitter-base turn-on voltage, as well as the extrinsic factors such as the emitter contact specific resistance, the substrate thermal conductivity and the heat source layout.< ></description><subject>Applied sciences</subject><subject>Electromagnetic heating</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Heterojunction bipolar transistors</subject><subject>Microwave devices</subject><subject>Numerical models</subject><subject>Power generation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stability analysis</subject><subject>Temperature dependence</subject><subject>Thermal conductivity</subject><subject>Thermal resistance</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqN0UFLwzAUB_AgCs7pwaunHETwUJekWZp3HKJTELzMc3ltE5eRtjNJkX17Oza8KoQXQn7vf3iPkGvOHjhnMOPqQeg5Y_qETPh8XmSgpDolE8a4ziDX-Tm5iHEzPpWUYkI2q7UJLXoaE1bOu7Sj2KHfRRdpb-nCL3ERZ_tC1yaZ0G-Grk6u72jltr3HQFPAbtSpD5F-u7Sm7eCT23pDTevS2EKt6z5NiJfkzKKP5up4T8nH89Pq8SV7e1--Pi7esjoHSBlirRqtWdNgbsEWYl6AhqICqC3aqmFVYwvkGio7VjkeBBAIhbBWo4B8Su4OudvQfw0mprJ1sTbeY2f6IZYCmAKpxd9QawlC839AJUHL_G9YiCJXfA_vD7AOfYzB2HIbXIthV3JW7hdZclUeFjna22Moxhq9Heddu_jbIHkOQu3ZzYE5Y8zv7zHjBwWupvU</recordid><startdate>19940501</startdate><enddate>19940501</enddate><creator>Liou, L.L.</creator><creator>Bayraktaroglu, B.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope><scope>7U5</scope></search><sort><creationdate>19940501</creationdate><title>Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers</title><author>Liou, L.L. ; Bayraktaroglu, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-aac6d880dda3f9f72579897b99cfafbd0bdf7a189bfa184184a992a972ff8a293</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Electromagnetic heating</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Heterojunction bipolar transistors</topic><topic>Microwave devices</topic><topic>Numerical models</topic><topic>Power generation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stability analysis</topic><topic>Temperature dependence</topic><topic>Thermal conductivity</topic><topic>Thermal resistance</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liou, L.L.</creatorcontrib><creatorcontrib>Bayraktaroglu, B.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Liou, L.L.</au><au>Bayraktaroglu, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1994-05-01</date><risdate>1994</risdate><volume>41</volume><issue>5</issue><spage>629</spage><epage>636</epage><pages>629-636</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A numerical electro-thermal model was developed for AlGaAs/GaAs heterojunction bipolar transistors (HBT's) to describe the base current, current gain and output power dependence on junction temperature. The model is applied to microwave HBT devices with multi-emitter fingers. The calculated results of the common-emitter, current-voltage characteristics in the linear active region show a "current crush" effect due to inherent nonuniform junction temperature, current density and current gain distribution in the device. The formation of highly localized high temperature regions, i.e., hot spots, occur when the device is operating beyond the current-crush point. This thermally induced current instability imposes an upper limit on the power capability of HBT's. The dependence of this effect on various factors is discussed. These factors include the intrinsic parameters such as the base current ideality factor, the "apparent" valence band discontinuity, and the temperature coefficient of the emitter-base turn-on voltage, as well as the extrinsic factors such as the emitter contact specific resistance, the substrate thermal conductivity and the heat source layout.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.285008</doi><tpages>8</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1994-05, Vol.41 (5), p.629-636 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electromagnetic heating Electronics Exact sciences and technology Gallium arsenide Heterojunction bipolar transistors Microwave devices Numerical models Power generation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability analysis Temperature dependence Thermal conductivity Thermal resistance Transistors |
| title | Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers |
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