A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar transistors (HBT's) is presented. The key advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. I...
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| Veröffentlicht in: | IEEE transactions on electron devices 1998-08, Vol.45 (8), p.1846-1848 |
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| container_issue | 8 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 45 |
| creator | Bovolon, N. Baureis, P. Muller, J.-E. Zwicknagl, P. Schultheis, R. Zanoni, E. |
| description | A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar transistors (HBT's) is presented. The key advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. In this brief, the measurement technique is illustrated, applied to multifinger HBT's and compared with other methods. |
| doi_str_mv | 10.1109/16.704388 |
| format | Article |
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The key advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. 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The key advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. In this brief, the measurement technique is illustrated, applied to multifinger HBT's and compared with other methods.</description><subject>Electrical resistance measurement</subject><subject>Gallium arsenide</subject><subject>Heterojunction bipolar transistors</subject><subject>Pulse amplifiers</subject><subject>Pulse measurements</subject><subject>Research and development</subject><subject>Temperature dependence</subject><subject>Temperature distribution</subject><subject>Thermal resistance</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0TtrwzAQAGBRWmiadujaSVOhgxO9JY8m9AWBLu1sFPuMHWzLleSh_742Dl3T4e4Q-u44OITuKdlQStItVRtNBDfmAq2olDpJlVCXaEUINUnKDb9GNyEcp6cSgq1QneHQdEMLuINYuxJXzuNYwxy-sy32EJoQbV_MwobRQwd9xK7CWftqs7CdE64hgnfHsS9i43p8aAbX2mmQt_3c7ny4RVeVbQPcneoafb08f-7ekv3H6_su2ycF1yQmWgsGjCkrhaxoSYhWZQrT3toSXQIwQStOpyiUOUiTSiJYWUKhOTkUTDG-Ro_L3MG77xFCzLsmFNC2tgc3hpylRDJJ-HlojOSUy39ARTiR9DxU2kih1QSfFlh4F4KHKh9801n_k1OSz2fMqcqXM072YbENAPy50-cvC2eXTQ</recordid><startdate>19980801</startdate><enddate>19980801</enddate><creator>Bovolon, N.</creator><creator>Baureis, P.</creator><creator>Muller, J.-E.</creator><creator>Zwicknagl, P.</creator><creator>Schultheis, R.</creator><creator>Zanoni, E.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19980801</creationdate><title>A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors</title><author>Bovolon, N. ; Baureis, P. ; Muller, J.-E. ; Zwicknagl, P. ; Schultheis, R. ; Zanoni, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c370t-7742e226a545f1d0076d9e3837a07dee241f311f3c68b5895042ddec730bc2623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Electrical resistance measurement</topic><topic>Gallium arsenide</topic><topic>Heterojunction bipolar transistors</topic><topic>Pulse amplifiers</topic><topic>Pulse measurements</topic><topic>Research and development</topic><topic>Temperature dependence</topic><topic>Temperature distribution</topic><topic>Thermal resistance</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bovolon, N.</creatorcontrib><creatorcontrib>Baureis, P.</creatorcontrib><creatorcontrib>Muller, J.-E.</creatorcontrib><creatorcontrib>Zwicknagl, P.</creatorcontrib><creatorcontrib>Schultheis, R.</creatorcontrib><creatorcontrib>Zanoni, E.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bovolon, N.</au><au>Baureis, P.</au><au>Muller, J.-E.</au><au>Zwicknagl, P.</au><au>Schultheis, R.</au><au>Zanoni, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1998-08-01</date><risdate>1998</risdate><volume>45</volume><issue>8</issue><spage>1846</spage><epage>1848</epage><pages>1846-1848</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar transistors (HBT's) is presented. The key advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. In this brief, the measurement technique is illustrated, applied to multifinger HBT's and compared with other methods.</abstract><pub>IEEE</pub><doi>10.1109/16.704388</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1998-08, Vol.45 (8), p.1846-1848 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29052503 |
| source | IEEE Electronic Library (IEL) |
| subjects | Electrical resistance measurement Gallium arsenide Heterojunction bipolar transistors Pulse amplifiers Pulse measurements Research and development Temperature dependence Temperature distribution Thermal resistance Voltage |
| title | A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors |
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