Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy

The structure and thermal stability of self-assembled InAs/GaAs quantum dots (QDs) grown by atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) QDs were studied using high-resolution electron microscopy with in situ heating experiment capabilities. The ALE QDs were larger and more regular sh...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of crystal growth 2005-11, Vol.285 (1), p.137-145
Hauptverfasser:	Kim, Hyung Seok, Suh, Ju Hyung, Park, Chan Gyung, Lee, Sang Jun, Noh, Sam Kyu, Song, Jin Dong, Park, Yong Ju, Choi, Won Jun, Lee, Jung Il
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Thermal stability of quantum dot A1. Transmission electron microscopy (TEM) A2. Quantum dot structure A3. InAs/GaAs quantum dot Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Physics Transport properties of condensed matter (nonelectronic)
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!