Semiconductor microlenses fabricated by one-step wet etching
We fabricated refractive semiconductor microlenses using a diffusion-limited chemical etching technique based an Br 2 solution. The simple one-step wet etching process produced high-quality microlenses of GaAs and InP, the two most popular compound semiconductor materials used in optoelectronics. A...
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| Veröffentlicht in: | IEEE photonics technology letters 2000-05, Vol.12 (5), p.507-509 |
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| container_title | IEEE photonics technology letters |
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| creator | Yu-Sik Kim Jaehoon Kim Joong-Seon Choe Young-Geun Rob Heonsu Jeon Woo, J.C. |
| description | We fabricated refractive semiconductor microlenses using a diffusion-limited chemical etching technique based an Br 2 solution. The simple one-step wet etching process produced high-quality microlenses of GaAs and InP, the two most popular compound semiconductor materials used in optoelectronics. A spherical GaAs microlens with a nominal lens diameter of 30 μm exhibited a radius of curvature and focal length of 91 and 36 μm, respectively. The surface roughness, examined by atomic force microscopy (AFM), was measured to be below /spl plusmn/10 /spl Aring/. This microlens fabrication method should be readily applicable due to the simplicity in processing and the high-quality results. |
| doi_str_mv | 10.1109/68.841268 |
| format | Article |
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The simple one-step wet etching process produced high-quality microlenses of GaAs and InP, the two most popular compound semiconductor materials used in optoelectronics. A spherical GaAs microlens with a nominal lens diameter of 30 μm exhibited a radius of curvature and focal length of 91 and 36 μm, respectively. The surface roughness, examined by atomic force microscopy (AFM), was measured to be below /spl plusmn/10 /spl Aring/. This microlens fabrication method should be readily applicable due to the simplicity in processing and the high-quality results.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.841268</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Atomic force microscopy ; Atomic measurements ; Chemicals ; Etching ; Force measurement ; Gallium arsenide ; Gallium arsenides ; Indium phosphide ; Lenses ; Microlenses ; Microoptics ; Semiconductor materials ; Semiconductors ; Surface roughness ; Wet etching</subject><ispartof>IEEE photonics technology letters, 2000-05, Vol.12 (5), p.507-509</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2000</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-758610d10c62326c3ef83e94414a070010adadf3ba83d31ccc0ee5f61c605523</citedby><cites>FETCH-LOGICAL-c368t-758610d10c62326c3ef83e94414a070010adadf3ba83d31ccc0ee5f61c605523</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/841268$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/841268$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yu-Sik Kim</creatorcontrib><creatorcontrib>Jaehoon Kim</creatorcontrib><creatorcontrib>Joong-Seon Choe</creatorcontrib><creatorcontrib>Young-Geun Rob</creatorcontrib><creatorcontrib>Heonsu Jeon</creatorcontrib><creatorcontrib>Woo, J.C.</creatorcontrib><title>Semiconductor microlenses fabricated by one-step wet etching</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We fabricated refractive semiconductor microlenses using a diffusion-limited chemical etching technique based an Br 2 solution. 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This microlens fabrication method should be readily applicable due to the simplicity in processing and the high-quality results.</description><subject>Atomic force microscopy</subject><subject>Atomic measurements</subject><subject>Chemicals</subject><subject>Etching</subject><subject>Force measurement</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Indium phosphide</subject><subject>Lenses</subject><subject>Microlenses</subject><subject>Microoptics</subject><subject>Semiconductor materials</subject><subject>Semiconductors</subject><subject>Surface roughness</subject><subject>Wet etching</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkU1Lw0AQhhdRsFYPXj0FD6KH1JnsZrMBL1L8goIHew_bzURT0qTubpD-ezekePCgp3lhHh7mg7FzhBki5LdSzZTARKoDNsFcYAyYicOQIWREnh6zE-fWAChSLibs7o02tenasje-s1HItmuodeSiSq9sbbSnMlrtoq6l2HnaRl_kI_Lmo27fT9lRpRtHZ_s6ZcvHh-X8OV68Pr3M7xex4VL5OEuVRCgRjEx4Ig2nSnHKhUChIQujgC51WfGVVrzkaIwBorSSaCSkacKn7GrUbm332ZPzxaZ2hppGt9T1rkjysBxg_j-owgCgBuP1nyBCEqQKlQzo5S903fW2DesWSok8ExIH380Ihes5Z6kqtrbeaLsLpmL4SyFVMf4lsBcjWxPRD7dvfgOzToWJ</recordid><startdate>20000501</startdate><enddate>20000501</enddate><creator>Yu-Sik Kim</creator><creator>Jaehoon Kim</creator><creator>Joong-Seon Choe</creator><creator>Young-Geun Rob</creator><creator>Heonsu Jeon</creator><creator>Woo, J.C.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20000501</creationdate><title>Semiconductor microlenses fabricated by one-step wet etching</title><author>Yu-Sik Kim ; Jaehoon Kim ; Joong-Seon Choe ; Young-Geun Rob ; Heonsu Jeon ; Woo, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-758610d10c62326c3ef83e94414a070010adadf3ba83d31ccc0ee5f61c605523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Atomic force microscopy</topic><topic>Atomic measurements</topic><topic>Chemicals</topic><topic>Etching</topic><topic>Force measurement</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Indium phosphide</topic><topic>Lenses</topic><topic>Microlenses</topic><topic>Microoptics</topic><topic>Semiconductor materials</topic><topic>Semiconductors</topic><topic>Surface roughness</topic><topic>Wet etching</topic><toplevel>online_resources</toplevel><creatorcontrib>Yu-Sik Kim</creatorcontrib><creatorcontrib>Jaehoon Kim</creatorcontrib><creatorcontrib>Joong-Seon Choe</creatorcontrib><creatorcontrib>Young-Geun Rob</creatorcontrib><creatorcontrib>Heonsu Jeon</creatorcontrib><creatorcontrib>Woo, J.C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yu-Sik Kim</au><au>Jaehoon Kim</au><au>Joong-Seon Choe</au><au>Young-Geun Rob</au><au>Heonsu Jeon</au><au>Woo, J.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Semiconductor microlenses fabricated by one-step wet etching</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2000-05-01</date><risdate>2000</risdate><volume>12</volume><issue>5</issue><spage>507</spage><epage>509</epage><pages>507-509</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We fabricated refractive semiconductor microlenses using a diffusion-limited chemical etching technique based an Br 2 solution. 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| ispartof | IEEE photonics technology letters, 2000-05, Vol.12 (5), p.507-509 |
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| subjects | Atomic force microscopy Atomic measurements Chemicals Etching Force measurement Gallium arsenide Gallium arsenides Indium phosphide Lenses Microlenses Microoptics Semiconductor materials Semiconductors Surface roughness Wet etching |
| title | Semiconductor microlenses fabricated by one-step wet etching |
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