Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface

Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface

Self-aligned gate by ion implantation n-channel and p-channel high-mobility (Al,Ga)As/GaAs heterostructure insulated-gate field-effect transistors (HIGFET's) have been fabricated on the same planar wafer surface for the first time. Enhancement-mode n-channel (Al,Ga)As/GaAs HIGFET's have de...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1985-12, Vol.6 (12), p.645-647
Hauptverfasser: Cirillo, N.C., Shur, M.S., Vold, P.J., Abrokwah, J.K., Tufte, O.N.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
FETs
Gallium arsenide
Insulation
Ion implantation
Logic circuits
Logic devices
Power dissipation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switching circuits
Temperature
Transconductance
Transistors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Self-aligned gate by ion implantation n-channel and p-channel high-mobility (Al,Ga)As/GaAs heterostructure insulated-gate field-effect transistors (HIGFET's) have been fabricated on the same planar wafer surface for the first time. Enhancement-mode n-channel (Al,Ga)As/GaAs HIGFET's have demonstrated extrinsic transconductances of 218 mS/mm at room temperature and 385 mS/mm at 77 K. Enhancement-mode p-channel (Al,Ga)As/GaAs HIGFET's have demonstrated extrinsic transconductances of 28 mS/mm at room temperature and 59 mS/mm at 77 K. There are the highest transconductance values ever reported on a p-channel FET device.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1985.26261