Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering
Boron carbon nitride films were deposited by radio frequency magnetron sputtering using a composite target consisting of h-BN and graphite in an Ar–N 2 gas mixture. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The...
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| Veröffentlicht in: | Applied surface science 2006-04, Vol.252 (12), p.4185-4189 |
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| container_title | Applied surface science |
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| creator | Liu, Lihua Wang, Yuxin Feng, Kecheng Li, Yingai Li, Weiqing Zhao, Chunhong Zhao, Yongnian |
| description | Boron carbon nitride films were deposited by radio frequency magnetron sputtering using a composite target consisting of h-BN and graphite in an Ar–N
2 gas mixture. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results suggest that the films are atomic-level hybrids composed of B, C and N atoms. The boron carbon nitride films prepared in the present experiment have a disordered structure. The sputtering power varied from 80
W to 130
W. This sputtering power was shown to have regular effect on the composition of boron carbon nitride films. The samples deposited at 80
W and 130
W are close to the stoichiometry of BC
3N. The sample deposited at 110
W is close to the stoichiometry of BCN. The samples deposited at 100
W and 120
W approach to BC
2N. It is very significant for us to synthesize boron carbon nitride compound with controllable composition by changing the sputtering power. |
| doi_str_mv | 10.1016/j.apsusc.2005.06.025 |
| format | Article |
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2 gas mixture. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results suggest that the films are atomic-level hybrids composed of B, C and N atoms. The boron carbon nitride films prepared in the present experiment have a disordered structure. The sputtering power varied from 80
W to 130
W. This sputtering power was shown to have regular effect on the composition of boron carbon nitride films. The samples deposited at 80
W and 130
W are close to the stoichiometry of BC
3N. The sample deposited at 110
W is close to the stoichiometry of BCN. The samples deposited at 100
W and 120
W approach to BC
2N. It is very significant for us to synthesize boron carbon nitride compound with controllable composition by changing the sputtering power.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2005.06.025</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Boron carbon nitride thin films ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Radio frequency magnetron sputtering</subject><ispartof>Applied surface science, 2006-04, Vol.252 (12), p.4185-4189</ispartof><rights>2005 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c433t-1d8b44fe5d7a465696468a7c61e6fcd081cc723085ce30c59e8a2b5127acbee93</citedby><cites>FETCH-LOGICAL-c433t-1d8b44fe5d7a465696468a7c61e6fcd081cc723085ce30c59e8a2b5127acbee93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2005.06.025$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17779063$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Lihua</creatorcontrib><creatorcontrib>Wang, Yuxin</creatorcontrib><creatorcontrib>Feng, Kecheng</creatorcontrib><creatorcontrib>Li, Yingai</creatorcontrib><creatorcontrib>Li, Weiqing</creatorcontrib><creatorcontrib>Zhao, Chunhong</creatorcontrib><creatorcontrib>Zhao, Yongnian</creatorcontrib><title>Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering</title><title>Applied surface science</title><description>Boron carbon nitride films were deposited by radio frequency magnetron sputtering using a composite target consisting of h-BN and graphite in an Ar–N
2 gas mixture. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results suggest that the films are atomic-level hybrids composed of B, C and N atoms. The boron carbon nitride films prepared in the present experiment have a disordered structure. The sputtering power varied from 80
W to 130
W. This sputtering power was shown to have regular effect on the composition of boron carbon nitride films. The samples deposited at 80
W and 130
W are close to the stoichiometry of BC
3N. The sample deposited at 110
W is close to the stoichiometry of BCN. The samples deposited at 100
W and 120
W approach to BC
2N. It is very significant for us to synthesize boron carbon nitride compound with controllable composition by changing the sputtering power.</description><subject>Boron carbon nitride thin films</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition by sputtering</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Radio frequency magnetron sputtering</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouH78Aw-96K01aZO0vQiy-AULelCvIZ1O1yxtU5OssP_eLF3w5mkC87wzk4eQK0YzRpm83WR68lsPWU6pyKjMaC6OyIJVZZEKUfFjsohYnfKiyE_JmfcbSlkeuwvy-eZw0k4HY8fEdkljXXyAdk0sownOtJiELzMmnekHnzS7xOnW2KRz-L3FEXbJoNcjhn3MT9sQ0JlxfUFOOt17vDzUc_Lx-PC-fE5Xr08vy_tVCvGWkLK2ajjvULSl5lLIWnJZ6RIkQ9lBSysGUOYFrQRgQUHUWOm8ESwvNTSIdXFObua5k7PxHB_UYDxg3-sR7darvKa05oJFkM8gOOu9w05Nzgza7RSjai9RbdQsUe0lKipVlBhj14f52oPuO6dHMP4vW5ZlTWURubuZw_jZH4NOeTDRDrbGIQTVWvP_ol8M6Ytl</recordid><startdate>20060415</startdate><enddate>20060415</enddate><creator>Liu, Lihua</creator><creator>Wang, Yuxin</creator><creator>Feng, Kecheng</creator><creator>Li, Yingai</creator><creator>Li, Weiqing</creator><creator>Zhao, Chunhong</creator><creator>Zhao, Yongnian</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20060415</creationdate><title>Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering</title><author>Liu, Lihua ; Wang, Yuxin ; Feng, Kecheng ; Li, Yingai ; Li, Weiqing ; Zhao, Chunhong ; Zhao, Yongnian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c433t-1d8b44fe5d7a465696468a7c61e6fcd081cc723085ce30c59e8a2b5127acbee93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Boron carbon nitride thin films</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition by sputtering</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Radio frequency magnetron sputtering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Lihua</creatorcontrib><creatorcontrib>Wang, Yuxin</creatorcontrib><creatorcontrib>Feng, Kecheng</creatorcontrib><creatorcontrib>Li, Yingai</creatorcontrib><creatorcontrib>Li, Weiqing</creatorcontrib><creatorcontrib>Zhao, Chunhong</creatorcontrib><creatorcontrib>Zhao, Yongnian</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Lihua</au><au>Wang, Yuxin</au><au>Feng, Kecheng</au><au>Li, Yingai</au><au>Li, Weiqing</au><au>Zhao, Chunhong</au><au>Zhao, Yongnian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering</atitle><jtitle>Applied surface science</jtitle><date>2006-04-15</date><risdate>2006</risdate><volume>252</volume><issue>12</issue><spage>4185</spage><epage>4189</epage><pages>4185-4189</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>Boron carbon nitride films were deposited by radio frequency magnetron sputtering using a composite target consisting of h-BN and graphite in an Ar–N
2 gas mixture. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results suggest that the films are atomic-level hybrids composed of B, C and N atoms. The boron carbon nitride films prepared in the present experiment have a disordered structure. The sputtering power varied from 80
W to 130
W. This sputtering power was shown to have regular effect on the composition of boron carbon nitride films. The samples deposited at 80
W and 130
W are close to the stoichiometry of BC
3N. The sample deposited at 110
W is close to the stoichiometry of BCN. The samples deposited at 100
W and 120
W approach to BC
2N. It is very significant for us to synthesize boron carbon nitride compound with controllable composition by changing the sputtering power.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2005.06.025</doi><tpages>5</tpages></addata></record> |
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| subjects | Boron carbon nitride thin films Cross-disciplinary physics: materials science rheology Deposition by sputtering Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Radio frequency magnetron sputtering |
| title | Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering |
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