A physical model of floating body thin film silicon-on-insulator nMOSFET with parasitic bipolar transistor

An analytical model for SOI nMOSFET with a floating body is developed to describe the I/sub ds/-V/sub ds/ characteristics. Considering all current components in MOSFET as well as parasitic BJT, this study evaluates body potential, investigates the correlations among many device parameters, and chara...

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Veröffentlicht in:	IEEE transactions on electron devices 1994-05, Vol.41 (5), p.726-733
Hauptverfasser:	Yu, Hyun-Kyu, Lyu, Jong-Son, Kang, Sang-Won, Kim, Choong-Ki
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Applied sciences Electronics Equations Exact sciences and technology Geometry Impact ionization Intrusion detection MOSFET circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Semiconductor thin films Silicon on insulator technology Threshold voltage Transistors
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