Anisotropic etching of silicon
Anisotropic etching of silicon has become an important technology in silicon semiconductor processing during the past ten years. It will continue to gain stature and acceptance as standard processing technology in the next few years. Anisotropic etching of (100) orientation silicon is being widely u...
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| Veröffentlicht in: | IEEE transactions on electron devices 1978-10, Vol.25 (10), p.1185-1193 |
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| container_title | IEEE transactions on electron devices |
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| creator | Bean, K.E. |
| description | Anisotropic etching of silicon has become an important technology in silicon semiconductor processing during the past ten years. It will continue to gain stature and acceptance as standard processing technology in the next few years. Anisotropic etching of (100) orientation silicon is being widely used today and (110) orientation technology is emerging. This paper discusses both orientation-dependent and concentration-dependent etching of (100) and (110) silicon. Very exact process control steps may be designed into a process by use of (100) anisotropic and concentration-dependent etching. Also, methods of oxide or nitride pin hole detection in (100) silicon are presented. Mask alignments to obtain different etch front termination in both (100) and (110) silicon are shown. Very high packing density structures, less than 1 μm, are obtained in the (110) technology, and extremely high etching ratios of greater than 650 to 1 are obtained in (110) orientation-dependent etching. Some of the many applications for anisotropic and concentration-dependent etching are described. |
| doi_str_mv | 10.1109/T-ED.1978.19250 |
| format | Article |
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It will continue to gain stature and acceptance as standard processing technology in the next few years. Anisotropic etching of (100) orientation silicon is being widely used today and (110) orientation technology is emerging. This paper discusses both orientation-dependent and concentration-dependent etching of (100) and (110) silicon. Very exact process control steps may be designed into a process by use of (100) anisotropic and concentration-dependent etching. Also, methods of oxide or nitride pin hole detection in (100) silicon are presented. Mask alignments to obtain different etch front termination in both (100) and (110) silicon are shown. Very high packing density structures, less than 1 μm, are obtained in the (110) technology, and extremely high etching ratios of greater than 650 to 1 are obtained in (110) orientation-dependent etching. 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It will continue to gain stature and acceptance as standard processing technology in the next few years. Anisotropic etching of (100) orientation silicon is being widely used today and (110) orientation technology is emerging. This paper discusses both orientation-dependent and concentration-dependent etching of (100) and (110) silicon. Very exact process control steps may be designed into a process by use of (100) anisotropic and concentration-dependent etching. Also, methods of oxide or nitride pin hole detection in (100) silicon are presented. Mask alignments to obtain different etch front termination in both (100) and (110) silicon are shown. Very high packing density structures, less than 1 μm, are obtained in the (110) technology, and extremely high etching ratios of greater than 650 to 1 are obtained in (110) orientation-dependent etching. Some of the many applications for anisotropic and concentration-dependent etching are described.</description><subject>Chemicals</subject><subject>Crystals</subject><subject>Electron devices</subject><subject>Etching</subject><subject>Silicon</subject><subject>Solid state circuits</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1978</creationdate><recordtype>article</recordtype><recordid>eNqNkE1LAzEQhoMoWKtnD4Lsydu2-d7kWNr6AQUv9Ryy2YlGtpuabA_-e3dbwauXGQae94V5ELoleEYI1vNtuV7NiK7UMKjAZ2hChKhKLbk8RxOMiSo1U-wSXeX8OZySczpB94su5NinuA-ugN59hO69iL7IoQ0udtfowts2w83vnqK3x_V2-VxuXp9elotN6Zis-lL5ppbWaU9Ew5UUntUVaailDANpFK2lp9B4qxUIXGOFayuZF1D52mlCBJuih1PvPsWvA-Te7EJ20La2g3jIhiqttGTyH-DwluZj4_wEuhRzTuDNPoWdTd-GYDMKM1uzXplRmDkKGxJ3p0QAgD-aV4NCzn4AwGNl7w</recordid><startdate>19781001</startdate><enddate>19781001</enddate><creator>Bean, K.E.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19781001</creationdate><title>Anisotropic etching of silicon</title><author>Bean, K.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-8fdb6ac9f15d4865f3b71d2a230e1d82b6f2edfa98e50b080ba63f5e7fbc91153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1978</creationdate><topic>Chemicals</topic><topic>Crystals</topic><topic>Electron devices</topic><topic>Etching</topic><topic>Silicon</topic><topic>Solid state circuits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bean, K.E.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bean, K.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anisotropic etching of silicon</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1978-10-01</date><risdate>1978</risdate><volume>25</volume><issue>10</issue><spage>1185</spage><epage>1193</epage><pages>1185-1193</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Anisotropic etching of silicon has become an important technology in silicon semiconductor processing during the past ten years. It will continue to gain stature and acceptance as standard processing technology in the next few years. Anisotropic etching of (100) orientation silicon is being widely used today and (110) orientation technology is emerging. This paper discusses both orientation-dependent and concentration-dependent etching of (100) and (110) silicon. Very exact process control steps may be designed into a process by use of (100) anisotropic and concentration-dependent etching. Also, methods of oxide or nitride pin hole detection in (100) silicon are presented. Mask alignments to obtain different etch front termination in both (100) and (110) silicon are shown. Very high packing density structures, less than 1 μm, are obtained in the (110) technology, and extremely high etching ratios of greater than 650 to 1 are obtained in (110) orientation-dependent etching. Some of the many applications for anisotropic and concentration-dependent etching are described.</abstract><pub>IEEE</pub><doi>10.1109/T-ED.1978.19250</doi><tpages>9</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1978-10, Vol.25 (10), p.1185-1193 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28989636 |
| source | IEEE Electronic Library Online |
| subjects | Chemicals Crystals Electron devices Etching Silicon Solid state circuits |
| title | Anisotropic etching of silicon |
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