Influence of the strain on the formation of GaInAs/GaAs quantum structures

The influence of the strain on the dot morphology of GaInAs quantum dots has been investigated. The strain was varied by the In content in GaInAs/GaAs quantum dots from 60% down to 30% by keeping the emission wavelength at about 900 nm at 10 K. Spectral properties are compared with morphological res...

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Veröffentlicht in:	Journal of crystal growth 2006, Vol.286 (1), p.6-10
Hauptverfasser:	Löffler, Andreas, Reithmaier, Johann-Peter, Forchel, Alfred, Sauerwald, Andres, Peskes, Dennis, Kümmell, Tilmar, Bacher, Gerd
Format:	Artikel
Sprache:	eng
Schlagworte:	A2. Self-organized growth A3. Molecular beam epitaxy A3. Quantum dots B1. Gallium arsenide compounds Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Equations of state, phase equilibria, and phase transitions Exact sciences and technology General studies of phase transitions Materials science Nanoscale materials and structures: fabrication and characterization Nucleation Physics Quantum dots
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