Initial growth stage of GaSb on Si(0 0 1) substrates with AlSb initiation layers

Although we recently found that a high-quality GaSb film can be grown on Si substrate by using an AlSb initiation layer, the growth mechanism, especially the effects of AlSb initiation layer, was not clear. Therefore, we investigated the initial growth stage of GaSb on Si(0 0 1) substrates with AlSb...

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Veröffentlicht in:	Journal of crystal growth 2005-10, Vol.283 (3), p.297-302
Hauptverfasser:	Akahane, Kouichi, Yamamoto, Naokatsu, Gozu, Shin-ichiro, Ueta, Akio, Ohtani, Naoki
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Molecular beam epitaxy B1. Antimonides B2. Semiconducting III–V materials Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Physics Transport properties of condensed matter (nonelectronic)
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