Analysis of emitter efficiency enhancement induced by residual stress for in situ phosphorus-doped polysilicon emitter transistors

This paper analyzes the enhancement of emitter efficiency in in situ phosphorus-doped polysilicon (IDP) emitter transistors, whose polysilicon emitter is crystallized from an in situ phosphorus-doped amorphous Si film. There are two factors that enhance the emitter efficiency of the IDP emitter. One...

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Veröffentlicht in:	IEEE transactions on electron devices 1997-06, Vol.44 (6), p.978-985
Hauptverfasser:	Kondo, M., Shiba, T., Tamaki, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Bipolar transistors Crystallization Epitaxial growth Residual stresses Semiconductor films Silicon Stress control Substrates Temperature dependence
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