Novel Nano-Electroplating-Based Plasmonic Platform for Giant Emission Enhancement in Monolayer Semiconductors

Two-dimensional semiconductors such as monolayer MoS2 have attracted considerable attention owing to their exceptional electronic and optical characteristics. However, their practical application has been hindered by the limited light absorption resulting from atomically thin thickness and low quant...

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Veröffentlicht in:ACS applied materials & interfaces 2023-12, Vol.15 (49), p.57783-57790
Hauptverfasser: Anand V S, Abhay, Sahoo, Mihir Kumar, Mujeeb, Faiha, Varghese, Abin, Dhar, Subhabrata, Lodha, Saurabh, Kumar, Anshuman
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container_end_page 57790
container_issue 49
container_start_page 57783
container_title ACS applied materials & interfaces
container_volume 15
creator Anand V S, Abhay
Sahoo, Mihir Kumar
Mujeeb, Faiha
Varghese, Abin
Dhar, Subhabrata
Lodha, Saurabh
Kumar, Anshuman
description Two-dimensional semiconductors such as monolayer MoS2 have attracted considerable attention owing to their exceptional electronic and optical characteristics. However, their practical application has been hindered by the limited light absorption resulting from atomically thin thickness and low quantum yield. A highly effective approach to address these limitations is by integrating subwavelength plasmonic nanostructures with monolayer semiconductors. In this study, we employed electron beam lithography and nanoelectroplating techniques to develop a gold nanodisc (AuND) array plasmonic platform. Monolayer MoS2 transferred on top of the AuND array yields up to 150-fold photoluminescence enhancement compared to a gold film without normalization with respect to plasmonic hot spots. In addition, the unique protocol of nanoelectroplating helps to get flat-top cylindrical discs which enable less tear during the delicate wet transfer of monolayer MoS2. We explain our experimental findings based on electromagnetic simulations.
doi_str_mv 10.1021/acsami.3c11564
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title Novel Nano-Electroplating-Based Plasmonic Platform for Giant Emission Enhancement in Monolayer Semiconductors
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