Response time characteristics of a transmissive uniformly doped GaAsP photocathode
In this paper, the matrix difference method is used to calculate the photoelectron continuity equation and the outgoing electron flux density equation. The effects of the GaAsP/AlGaAsP recombination rate, electron diffusion coefficient, and activation layer thickness on the time-resolved characteris...
Gespeichert in:
| Veröffentlicht in: | Applied optics (2004) 2023-11, Vol.62 (33), p.8804-8810 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 8810 |
|---|---|
| container_issue | 33 |
| container_start_page | 8804 |
| container_title | Applied optics (2004) |
| container_volume | 62 |
| creator | Jia, Tiantian Gan, Linyu Guo, Xin Qiu, Hongjin Zhang, Ruoyu Liu, Xuchuan Du, Jinjuan Zhang, Yijun Liu, Lei |
| description | In this paper, the matrix difference method is used to calculate the photoelectron continuity equation and the outgoing electron flux density equation. The effects of the GaAsP/AlGaAsP recombination rate, electron diffusion coefficient, and activation layer thickness on the time-resolved characteristics and quantum efficiency of a GaAsP photocathode are systematically studied, and the accuracy of the theoretical calculation is verified by experiments. The response speed and quantum efficiency of the GaAsP photocathode can be greatly improved by adjusting the thickness of the GaAsP activation layer reasonably. |
| doi_str_mv | 10.1364/AO.503832 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2896804955</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2892329464</sourcerecordid><originalsourceid>FETCH-LOGICAL-c250t-4f311ea36fc183006e584fa84fed4ffbf9fdb71114c5a217613fae309a9865b53</originalsourceid><addsrcrecordid>eNpd0E1Lw0AQBuBFFKzVg_9gwYseUve72WMoWoVCpSh4C9vNLE1JsnF3I_TfN6WePAwzh4fh5UXonpIZ5Uo8F-uZJDzn7AJNGJUy41TJSzQZT51Rln9fo5sY94RwKfR8gjYbiL3vIuBUt4DtzgRjE4Q6ptpG7B02OAXTxbaOsf4FPHS186FtDrjyPVR4aYr4gfudT96atPMV3KIrZ5oId397ir5eXz4Xb9lqvXxfFKvMMklSJhynFAxXztKcE6JA5sKZcaASzm2ddtV2TikVVhpG54pyZ4ATbXSu5FbyKXo8_-2D_xkgpnLMaKFpTAd-iCXLtcqJ0PJEH_7RvR9CN6Y7KcaZFkqM6umsbPAxBnBlH-rWhENJSXlqtyzW5bldfgQZLWx7</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2892329464</pqid></control><display><type>article</type><title>Response time characteristics of a transmissive uniformly doped GaAsP photocathode</title><source>OSA_美国光学学会数据库1</source><source>Alma/SFX Local Collection</source><creator>Jia, Tiantian ; Gan, Linyu ; Guo, Xin ; Qiu, Hongjin ; Zhang, Ruoyu ; Liu, Xuchuan ; Du, Jinjuan ; Zhang, Yijun ; Liu, Lei</creator><creatorcontrib>Jia, Tiantian ; Gan, Linyu ; Guo, Xin ; Qiu, Hongjin ; Zhang, Ruoyu ; Liu, Xuchuan ; Du, Jinjuan ; Zhang, Yijun ; Liu, Lei</creatorcontrib><description>In this paper, the matrix difference method is used to calculate the photoelectron continuity equation and the outgoing electron flux density equation. The effects of the GaAsP/AlGaAsP recombination rate, electron diffusion coefficient, and activation layer thickness on the time-resolved characteristics and quantum efficiency of a GaAsP photocathode are systematically studied, and the accuracy of the theoretical calculation is verified by experiments. The response speed and quantum efficiency of the GaAsP photocathode can be greatly improved by adjusting the thickness of the GaAsP activation layer reasonably.</description><identifier>ISSN: 1559-128X</identifier><identifier>EISSN: 2155-3165</identifier><identifier>EISSN: 1539-4522</identifier><identifier>DOI: 10.1364/AO.503832</identifier><language>eng</language><publisher>Washington: Optical Society of America</publisher><subject>Continuity equation ; Diffusion coefficient ; Diffusion layers ; Diffusion rate ; Electron diffusion ; Electron flux density ; Mathematical analysis ; Photocathodes ; Photoelectrons ; Quantum efficiency ; Thickness</subject><ispartof>Applied optics (2004), 2023-11, Vol.62 (33), p.8804-8810</ispartof><rights>Copyright Optical Society of America Nov 20, 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c250t-4f311ea36fc183006e584fa84fed4ffbf9fdb71114c5a217613fae309a9865b53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,3256,27923,27924</link.rule.ids></links><search><creatorcontrib>Jia, Tiantian</creatorcontrib><creatorcontrib>Gan, Linyu</creatorcontrib><creatorcontrib>Guo, Xin</creatorcontrib><creatorcontrib>Qiu, Hongjin</creatorcontrib><creatorcontrib>Zhang, Ruoyu</creatorcontrib><creatorcontrib>Liu, Xuchuan</creatorcontrib><creatorcontrib>Du, Jinjuan</creatorcontrib><creatorcontrib>Zhang, Yijun</creatorcontrib><creatorcontrib>Liu, Lei</creatorcontrib><title>Response time characteristics of a transmissive uniformly doped GaAsP photocathode</title><title>Applied optics (2004)</title><description>In this paper, the matrix difference method is used to calculate the photoelectron continuity equation and the outgoing electron flux density equation. The effects of the GaAsP/AlGaAsP recombination rate, electron diffusion coefficient, and activation layer thickness on the time-resolved characteristics and quantum efficiency of a GaAsP photocathode are systematically studied, and the accuracy of the theoretical calculation is verified by experiments. The response speed and quantum efficiency of the GaAsP photocathode can be greatly improved by adjusting the thickness of the GaAsP activation layer reasonably.</description><subject>Continuity equation</subject><subject>Diffusion coefficient</subject><subject>Diffusion layers</subject><subject>Diffusion rate</subject><subject>Electron diffusion</subject><subject>Electron flux density</subject><subject>Mathematical analysis</subject><subject>Photocathodes</subject><subject>Photoelectrons</subject><subject>Quantum efficiency</subject><subject>Thickness</subject><issn>1559-128X</issn><issn>2155-3165</issn><issn>1539-4522</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpd0E1Lw0AQBuBFFKzVg_9gwYseUve72WMoWoVCpSh4C9vNLE1JsnF3I_TfN6WePAwzh4fh5UXonpIZ5Uo8F-uZJDzn7AJNGJUy41TJSzQZT51Rln9fo5sY94RwKfR8gjYbiL3vIuBUt4DtzgRjE4Q6ptpG7B02OAXTxbaOsf4FPHS186FtDrjyPVR4aYr4gfudT96atPMV3KIrZ5oId397ir5eXz4Xb9lqvXxfFKvMMklSJhynFAxXztKcE6JA5sKZcaASzm2ddtV2TikVVhpG54pyZ4ATbXSu5FbyKXo8_-2D_xkgpnLMaKFpTAd-iCXLtcqJ0PJEH_7RvR9CN6Y7KcaZFkqM6umsbPAxBnBlH-rWhENJSXlqtyzW5bldfgQZLWx7</recordid><startdate>20231120</startdate><enddate>20231120</enddate><creator>Jia, Tiantian</creator><creator>Gan, Linyu</creator><creator>Guo, Xin</creator><creator>Qiu, Hongjin</creator><creator>Zhang, Ruoyu</creator><creator>Liu, Xuchuan</creator><creator>Du, Jinjuan</creator><creator>Zhang, Yijun</creator><creator>Liu, Lei</creator><general>Optical Society of America</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20231120</creationdate><title>Response time characteristics of a transmissive uniformly doped GaAsP photocathode</title><author>Jia, Tiantian ; Gan, Linyu ; Guo, Xin ; Qiu, Hongjin ; Zhang, Ruoyu ; Liu, Xuchuan ; Du, Jinjuan ; Zhang, Yijun ; Liu, Lei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c250t-4f311ea36fc183006e584fa84fed4ffbf9fdb71114c5a217613fae309a9865b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Continuity equation</topic><topic>Diffusion coefficient</topic><topic>Diffusion layers</topic><topic>Diffusion rate</topic><topic>Electron diffusion</topic><topic>Electron flux density</topic><topic>Mathematical analysis</topic><topic>Photocathodes</topic><topic>Photoelectrons</topic><topic>Quantum efficiency</topic><topic>Thickness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jia, Tiantian</creatorcontrib><creatorcontrib>Gan, Linyu</creatorcontrib><creatorcontrib>Guo, Xin</creatorcontrib><creatorcontrib>Qiu, Hongjin</creatorcontrib><creatorcontrib>Zhang, Ruoyu</creatorcontrib><creatorcontrib>Liu, Xuchuan</creatorcontrib><creatorcontrib>Du, Jinjuan</creatorcontrib><creatorcontrib>Zhang, Yijun</creatorcontrib><creatorcontrib>Liu, Lei</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Applied optics (2004)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jia, Tiantian</au><au>Gan, Linyu</au><au>Guo, Xin</au><au>Qiu, Hongjin</au><au>Zhang, Ruoyu</au><au>Liu, Xuchuan</au><au>Du, Jinjuan</au><au>Zhang, Yijun</au><au>Liu, Lei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Response time characteristics of a transmissive uniformly doped GaAsP photocathode</atitle><jtitle>Applied optics (2004)</jtitle><date>2023-11-20</date><risdate>2023</risdate><volume>62</volume><issue>33</issue><spage>8804</spage><epage>8810</epage><pages>8804-8810</pages><issn>1559-128X</issn><eissn>2155-3165</eissn><eissn>1539-4522</eissn><abstract>In this paper, the matrix difference method is used to calculate the photoelectron continuity equation and the outgoing electron flux density equation. The effects of the GaAsP/AlGaAsP recombination rate, electron diffusion coefficient, and activation layer thickness on the time-resolved characteristics and quantum efficiency of a GaAsP photocathode are systematically studied, and the accuracy of the theoretical calculation is verified by experiments. The response speed and quantum efficiency of the GaAsP photocathode can be greatly improved by adjusting the thickness of the GaAsP activation layer reasonably.</abstract><cop>Washington</cop><pub>Optical Society of America</pub><doi>10.1364/AO.503832</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1559-128X |
| ispartof | Applied optics (2004), 2023-11, Vol.62 (33), p.8804-8810 |
| issn | 1559-128X 2155-3165 1539-4522 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_2896804955 |
| source | OSA_美国光学学会数据库1; Alma/SFX Local Collection |
| subjects | Continuity equation Diffusion coefficient Diffusion layers Diffusion rate Electron diffusion Electron flux density Mathematical analysis Photocathodes Photoelectrons Quantum efficiency Thickness |
| title | Response time characteristics of a transmissive uniformly doped GaAsP photocathode |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T16%3A12%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Response%20time%20characteristics%20of%20a%20transmissive%20uniformly%20doped%20GaAsP%20photocathode&rft.jtitle=Applied%20optics%20(2004)&rft.au=Jia,%20Tiantian&rft.date=2023-11-20&rft.volume=62&rft.issue=33&rft.spage=8804&rft.epage=8810&rft.pages=8804-8810&rft.issn=1559-128X&rft.eissn=2155-3165&rft_id=info:doi/10.1364/AO.503832&rft_dat=%3Cproquest_cross%3E2892329464%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2892329464&rft_id=info:pmid/&rfr_iscdi=true |