Influence of the annealing temperature on violet emission of ZnO films obtained by oxidation of Zn film on quartz glass
The photoluminescence (PL) emission properties of ZnO films obtained on quartz glass substrate by the oxidation of Zn films with the oxygen pressure of 50Pa at temperature of 773 K~973 K were studied. The strong single violet emission centering on 424 nm (or 2.90 eV) without any accompanying deep-le...
Gespeichert in:
| Veröffentlicht in: | Journal of materials science 2006-04, Vol.41 (8), p.2237-2241 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2241 |
|---|---|
| container_issue | 8 |
| container_start_page | 2237 |
| container_title | Journal of materials science |
| container_volume | 41 |
| creator | FAN, X. M LIAN, J. S GUO, Z. X ZHAO, L JIANG, Q |
| description | The photoluminescence (PL) emission properties of ZnO films obtained on quartz glass substrate by the oxidation of Zn films with the oxygen pressure of 50Pa at temperature of 773 K~973 K were studied. The strong single violet emission centering on 424 nm (or 2.90 eV) without any accompanying deep-level emission and UV emission was observed in the PL spectra of the ZnO films at room temperature. The intensity of violet emission increased with increasing annealing temperature in the range of 773 K~873 K and decreased with increasing annealing temperature in the range of 873 K~973 K. These violet emission bands are attributed to the electron transition from interstitial zinc (Zni) level (2.91 eV) to the valence band. |
| doi_str_mv | 10.1007/s10853-006-7177-4 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28959824</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1082184316</sourcerecordid><originalsourceid>FETCH-LOGICAL-c464t-2a981cb3c224a931190579755d04e4239cb0ee86eebe519cee39af4c3922a2063</originalsourceid><addsrcrecordid>eNqNkU1LHTEUhkOp0FvrD-guUFrcjM3nJFkWqR8guNGNm5DJPWMjuZlrkmm1v96MVyp0UboKhzx5zhtehD5SckQJUV8LJVryjpC-U1SpTrxBKyoV74Qm_C1aEcJYx0RP36H3pdwRQqRidIV-nacxzpA84GnE9QdglxK4GNItrrDZQnZ1zu0y4Z9hilAxbEIpoc2Nv0mXeAxxU_A0VBcSrPHwiKeHsHb1D_JMLIL72eX6G99GV8oHtDe6WODg5dxH1yffr47PuovL0_PjbxedF72oHXNGUz9wz5hwhlNqWm6jpFwTAYJx4wcCoHuAASQ1HoAbNwrPDWOOkZ7voy877zZP9zOUalt8DzG6BNNcLNNGGs3E_4G91g08_CfYimBUC06X5Z_-Qu-mOaf2X8uYNIoSYRYh3VE-T6VkGO02h43Lj01ll3LtrlzbyrVLuXZJ-_nF7Ip3ccwu-VBeHyolGZGUPwHesqOx</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2259710498</pqid></control><display><type>article</type><title>Influence of the annealing temperature on violet emission of ZnO films obtained by oxidation of Zn film on quartz glass</title><source>SpringerLink Journals</source><creator>FAN, X. M ; LIAN, J. S ; GUO, Z. X ; ZHAO, L ; JIANG, Q</creator><creatorcontrib>FAN, X. M ; LIAN, J. S ; GUO, Z. X ; ZHAO, L ; JIANG, Q</creatorcontrib><description>The photoluminescence (PL) emission properties of ZnO films obtained on quartz glass substrate by the oxidation of Zn films with the oxygen pressure of 50Pa at temperature of 773 K~973 K were studied. The strong single violet emission centering on 424 nm (or 2.90 eV) without any accompanying deep-level emission and UV emission was observed in the PL spectra of the ZnO films at room temperature. The intensity of violet emission increased with increasing annealing temperature in the range of 773 K~873 K and decreased with increasing annealing temperature in the range of 873 K~973 K. These violet emission bands are attributed to the electron transition from interstitial zinc (Zni) level (2.91 eV) to the valence band.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-006-7177-4</identifier><identifier>CODEN: JMTSAS</identifier><language>eng</language><publisher>Heidelberg: Springer</publisher><subject>Annealing ; Bands ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron transitions ; Emission ; Emission analysis ; Emission spectra ; Exact sciences and technology ; Glass substrates ; Ii-vi semiconductors ; Materials science ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Oxidation ; Photoluminescence ; Physics ; Quartz ; Silica glass ; Spectral emissivity ; Valence band ; Zinc ; Zinc oxide</subject><ispartof>Journal of materials science, 2006-04, Vol.41 (8), p.2237-2241</ispartof><rights>2006 INIST-CNRS</rights><rights>Journal of Materials Science is a copyright of Springer, (2006). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c464t-2a981cb3c224a931190579755d04e4239cb0ee86eebe519cee39af4c3922a2063</citedby><cites>FETCH-LOGICAL-c464t-2a981cb3c224a931190579755d04e4239cb0ee86eebe519cee39af4c3922a2063</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17752051$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>FAN, X. M</creatorcontrib><creatorcontrib>LIAN, J. S</creatorcontrib><creatorcontrib>GUO, Z. X</creatorcontrib><creatorcontrib>ZHAO, L</creatorcontrib><creatorcontrib>JIANG, Q</creatorcontrib><title>Influence of the annealing temperature on violet emission of ZnO films obtained by oxidation of Zn film on quartz glass</title><title>Journal of materials science</title><description>The photoluminescence (PL) emission properties of ZnO films obtained on quartz glass substrate by the oxidation of Zn films with the oxygen pressure of 50Pa at temperature of 773 K~973 K were studied. The strong single violet emission centering on 424 nm (or 2.90 eV) without any accompanying deep-level emission and UV emission was observed in the PL spectra of the ZnO films at room temperature. The intensity of violet emission increased with increasing annealing temperature in the range of 773 K~873 K and decreased with increasing annealing temperature in the range of 873 K~973 K. These violet emission bands are attributed to the electron transition from interstitial zinc (Zni) level (2.91 eV) to the valence band.</description><subject>Annealing</subject><subject>Bands</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron transitions</subject><subject>Emission</subject><subject>Emission analysis</subject><subject>Emission spectra</subject><subject>Exact sciences and technology</subject><subject>Glass substrates</subject><subject>Ii-vi semiconductors</subject><subject>Materials science</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Oxidation</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Quartz</subject><subject>Silica glass</subject><subject>Spectral emissivity</subject><subject>Valence band</subject><subject>Zinc</subject><subject>Zinc oxide</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqNkU1LHTEUhkOp0FvrD-guUFrcjM3nJFkWqR8guNGNm5DJPWMjuZlrkmm1v96MVyp0UboKhzx5zhtehD5SckQJUV8LJVryjpC-U1SpTrxBKyoV74Qm_C1aEcJYx0RP36H3pdwRQqRidIV-nacxzpA84GnE9QdglxK4GNItrrDZQnZ1zu0y4Z9hilAxbEIpoc2Nv0mXeAxxU_A0VBcSrPHwiKeHsHb1D_JMLIL72eX6G99GV8oHtDe6WODg5dxH1yffr47PuovL0_PjbxedF72oHXNGUz9wz5hwhlNqWm6jpFwTAYJx4wcCoHuAASQ1HoAbNwrPDWOOkZ7voy877zZP9zOUalt8DzG6BNNcLNNGGs3E_4G91g08_CfYimBUC06X5Z_-Qu-mOaf2X8uYNIoSYRYh3VE-T6VkGO02h43Lj01ll3LtrlzbyrVLuXZJ-_nF7Ip3ccwu-VBeHyolGZGUPwHesqOx</recordid><startdate>20060401</startdate><enddate>20060401</enddate><creator>FAN, X. M</creator><creator>LIAN, J. S</creator><creator>GUO, Z. X</creator><creator>ZHAO, L</creator><creator>JIANG, Q</creator><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7QQ</scope></search><sort><creationdate>20060401</creationdate><title>Influence of the annealing temperature on violet emission of ZnO films obtained by oxidation of Zn film on quartz glass</title><author>FAN, X. M ; LIAN, J. S ; GUO, Z. X ; ZHAO, L ; JIANG, Q</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c464t-2a981cb3c224a931190579755d04e4239cb0ee86eebe519cee39af4c3922a2063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Annealing</topic><topic>Bands</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron transitions</topic><topic>Emission</topic><topic>Emission analysis</topic><topic>Emission spectra</topic><topic>Exact sciences and technology</topic><topic>Glass substrates</topic><topic>Ii-vi semiconductors</topic><topic>Materials science</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Oxidation</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Quartz</topic><topic>Silica glass</topic><topic>Spectral emissivity</topic><topic>Valence band</topic><topic>Zinc</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>FAN, X. M</creatorcontrib><creatorcontrib>LIAN, J. S</creatorcontrib><creatorcontrib>GUO, Z. X</creatorcontrib><creatorcontrib>ZHAO, L</creatorcontrib><creatorcontrib>JIANG, Q</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Ceramic Abstracts</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>FAN, X. M</au><au>LIAN, J. S</au><au>GUO, Z. X</au><au>ZHAO, L</au><au>JIANG, Q</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of the annealing temperature on violet emission of ZnO films obtained by oxidation of Zn film on quartz glass</atitle><jtitle>Journal of materials science</jtitle><date>2006-04-01</date><risdate>2006</risdate><volume>41</volume><issue>8</issue><spage>2237</spage><epage>2241</epage><pages>2237-2241</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><coden>JMTSAS</coden><abstract>The photoluminescence (PL) emission properties of ZnO films obtained on quartz glass substrate by the oxidation of Zn films with the oxygen pressure of 50Pa at temperature of 773 K~973 K were studied. The strong single violet emission centering on 424 nm (or 2.90 eV) without any accompanying deep-level emission and UV emission was observed in the PL spectra of the ZnO films at room temperature. The intensity of violet emission increased with increasing annealing temperature in the range of 773 K~873 K and decreased with increasing annealing temperature in the range of 873 K~973 K. These violet emission bands are attributed to the electron transition from interstitial zinc (Zni) level (2.91 eV) to the valence band.</abstract><cop>Heidelberg</cop><pub>Springer</pub><doi>10.1007/s10853-006-7177-4</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-2461 |
| ispartof | Journal of materials science, 2006-04, Vol.41 (8), p.2237-2241 |
| issn | 0022-2461 1573-4803 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28959824 |
| source | SpringerLink Journals |
| subjects | Annealing Bands Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron transitions Emission Emission analysis Emission spectra Exact sciences and technology Glass substrates Ii-vi semiconductors Materials science Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Oxidation Photoluminescence Physics Quartz Silica glass Spectral emissivity Valence band Zinc Zinc oxide |
| title | Influence of the annealing temperature on violet emission of ZnO films obtained by oxidation of Zn film on quartz glass |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T03%3A02%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20the%20annealing%20temperature%20on%20violet%20emission%20of%20ZnO%20films%20obtained%20by%20oxidation%20of%20Zn%20film%20on%20quartz%20glass&rft.jtitle=Journal%20of%20materials%20science&rft.au=FAN,%20X.%20M&rft.date=2006-04-01&rft.volume=41&rft.issue=8&rft.spage=2237&rft.epage=2241&rft.pages=2237-2241&rft.issn=0022-2461&rft.eissn=1573-4803&rft.coden=JMTSAS&rft_id=info:doi/10.1007/s10853-006-7177-4&rft_dat=%3Cproquest_cross%3E1082184316%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2259710498&rft_id=info:pmid/&rfr_iscdi=true |