Angle-dependent XPS study of the mechanisms of “high–low temperature” activation of GaAs photocathode
The surface chemical compositions, atomic concentration percentage and layer thickness after “high-temperature” single-step activation and “high–low temperature” two-step activation were obtained using quantitative analysis of angle-dependent X-ray photoelectron spectroscopy (XPS). It was found that...
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Veröffentlicht in: | Applied surface science 2005-09, Vol.251 (1), p.267-272 |
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description | The surface chemical compositions, atomic concentration percentage and layer thickness after “high-temperature” single-step activation and “high–low temperature” two-step activation were obtained using quantitative analysis of angle-dependent X-ray photoelectron spectroscopy (XPS). It was found that compared to single-step activation, the thickness of GaAs–O interface barrier had a remarkable decrease, the degree of As–O bond became much smaller and the Ga–O bond became dominating, and at the same time the thickness of (Cs, O) layer also had a deduction while the ratio of Cs to O had no change after two-step activation. The measured spectral response curves showed that a increase of 29% of sensitivity had been obtained after two-step activation. To explore the inherent mechanisms of influences of the evolution of GaAs(Cs, O) surface layers on photoemission, surface electric barrier models based on the experimental results were built. By calculation of electron escape probability it was found that the decrease of thickness of GaAs–O interface barrier and (Cs, O) layer is the main reasons, which explained why higher sensitivity is achieved after two-step activation than single-step activation. |
doi_str_mv | 10.1016/j.apsusc.2005.03.220 |
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It was found that compared to single-step activation, the thickness of GaAs–O interface barrier had a remarkable decrease, the degree of As–O bond became much smaller and the Ga–O bond became dominating, and at the same time the thickness of (Cs, O) layer also had a deduction while the ratio of Cs to O had no change after two-step activation. The measured spectral response curves showed that a increase of 29% of sensitivity had been obtained after two-step activation. To explore the inherent mechanisms of influences of the evolution of GaAs(Cs, O) surface layers on photoemission, surface electric barrier models based on the experimental results were built. By calculation of electron escape probability it was found that the decrease of thickness of GaAs–O interface barrier and (Cs, O) layer is the main reasons, which explained why higher sensitivity is achieved after two-step activation than single-step activation.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2005.03.220</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Activation ; Angle-dependent X-ray photoelectron spectroscopy (XPS) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Escape probability ; Exact sciences and technology ; GaAs ; Photocathode ; Physics</subject><ispartof>Applied surface science, 2005-09, Vol.251 (1), p.267-272</ispartof><rights>2005 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-8b43173f9c721510649de072036be46496ea7ff2f91710c9582572bfc7fea9163</citedby><cites>FETCH-LOGICAL-c367t-8b43173f9c721510649de072036be46496ea7ff2f91710c9582572bfc7fea9163</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2005.03.220$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17142998$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Du, Xiaoqing</creatorcontrib><creatorcontrib>Chang, Benkang</creatorcontrib><title>Angle-dependent XPS study of the mechanisms of “high–low temperature” activation of GaAs photocathode</title><title>Applied surface science</title><description>The surface chemical compositions, atomic concentration percentage and layer thickness after “high-temperature” single-step activation and “high–low temperature” two-step activation were obtained using quantitative analysis of angle-dependent X-ray photoelectron spectroscopy (XPS). It was found that compared to single-step activation, the thickness of GaAs–O interface barrier had a remarkable decrease, the degree of As–O bond became much smaller and the Ga–O bond became dominating, and at the same time the thickness of (Cs, O) layer also had a deduction while the ratio of Cs to O had no change after two-step activation. The measured spectral response curves showed that a increase of 29% of sensitivity had been obtained after two-step activation. To explore the inherent mechanisms of influences of the evolution of GaAs(Cs, O) surface layers on photoemission, surface electric barrier models based on the experimental results were built. By calculation of electron escape probability it was found that the decrease of thickness of GaAs–O interface barrier and (Cs, O) layer is the main reasons, which explained why higher sensitivity is achieved after two-step activation than single-step activation.</description><subject>Activation</subject><subject>Angle-dependent X-ray photoelectron spectroscopy (XPS)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Escape probability</subject><subject>Exact sciences and technology</subject><subject>GaAs</subject><subject>Photocathode</subject><subject>Physics</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kM9q3DAQxkVooNskb9CDL-3Nrv7YlnUpLKFJC4EW0kJuQiuPYm1sy9XIKbntO_Savtw-Sb1soLeehpn5fd8wHyFvGS0YZfWHbWEmnNEWnNKqoKLgnJ6QFWukyKuqKV-R1YKpvBSCvyZvELeUMr5sV-RhPd73kLcwwdjCmLK7b7cZprl9yoLLUgfZALYzo8cBD5P97rnz991-97sPv7IEwwTRpDnCfvcnMzb5R5N8GA_otVljNnUhBWtSF1o4J6fO9AgXL_WM_Lj69P3yc37z9frL5fomt6KWKW82pWBSOGUlZxWjdalaoJJTUW-gXLoajHSOO8Uko1ZVDa8k3zgrHRjFanFG3h99pxh-zoBJDx4t9L0ZIcyoeaOqWiq6gOURtDEgRnB6in4w8Ukzqg_J6q0-JqsPyWoq9JLsInv34m_Qmt5FM1qP_7SSlVypZuE-HjlYnn30EDVaD6OF1kewSbfB___QXxmylAk</recordid><startdate>20050915</startdate><enddate>20050915</enddate><creator>Du, Xiaoqing</creator><creator>Chang, Benkang</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050915</creationdate><title>Angle-dependent XPS study of the mechanisms of “high–low temperature” activation of GaAs photocathode</title><author>Du, Xiaoqing ; Chang, Benkang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-8b43173f9c721510649de072036be46496ea7ff2f91710c9582572bfc7fea9163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Activation</topic><topic>Angle-dependent X-ray photoelectron spectroscopy (XPS)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Escape probability</topic><topic>Exact sciences and technology</topic><topic>GaAs</topic><topic>Photocathode</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Du, Xiaoqing</creatorcontrib><creatorcontrib>Chang, Benkang</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Du, Xiaoqing</au><au>Chang, Benkang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Angle-dependent XPS study of the mechanisms of “high–low temperature” activation of GaAs photocathode</atitle><jtitle>Applied surface science</jtitle><date>2005-09-15</date><risdate>2005</risdate><volume>251</volume><issue>1</issue><spage>267</spage><epage>272</epage><pages>267-272</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>The surface chemical compositions, atomic concentration percentage and layer thickness after “high-temperature” single-step activation and “high–low temperature” two-step activation were obtained using quantitative analysis of angle-dependent X-ray photoelectron spectroscopy (XPS). It was found that compared to single-step activation, the thickness of GaAs–O interface barrier had a remarkable decrease, the degree of As–O bond became much smaller and the Ga–O bond became dominating, and at the same time the thickness of (Cs, O) layer also had a deduction while the ratio of Cs to O had no change after two-step activation. The measured spectral response curves showed that a increase of 29% of sensitivity had been obtained after two-step activation. To explore the inherent mechanisms of influences of the evolution of GaAs(Cs, O) surface layers on photoemission, surface electric barrier models based on the experimental results were built. By calculation of electron escape probability it was found that the decrease of thickness of GaAs–O interface barrier and (Cs, O) layer is the main reasons, which explained why higher sensitivity is achieved after two-step activation than single-step activation.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2005.03.220</doi><tpages>6</tpages></addata></record> |
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subjects | Activation Angle-dependent X-ray photoelectron spectroscopy (XPS) Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Escape probability Exact sciences and technology GaAs Photocathode Physics |
title | Angle-dependent XPS study of the mechanisms of “high–low temperature” activation of GaAs photocathode |
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