Effect of zirconia addition on dielectric loss and microstructure of aluminum nitride ceramics
The effects of sintering additives on dielectric loss tangent of AlN ceramics have been investigated. Different amounts of Y 2O 3 and ZrO 2 were added as sintering additives to AlN powder and pressureless sintering was performed at 1900 °C for 2 h in a flowing nitrogen atmosphere. ZrN phase was dete...
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| Veröffentlicht in: | Ceramics international 2007-01, Vol.33 (2), p.269-272 |
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| container_title | Ceramics international |
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| creator | Kume, Shoichi Yasuoka, Masaki Omura, Naoki Watari, Koji |
| description | The effects of sintering additives on dielectric loss tangent of AlN ceramics have been investigated. Different amounts of Y
2O
3 and ZrO
2 were added as sintering additives to AlN powder and pressureless sintering was performed at 1900
°C for 2
h in a flowing nitrogen atmosphere. ZrN phase was detected in AlN ceramics when ZrO
2 addition was more than 0.1
mol.%. Densification behavior of both Y
2O
3 and ZrO
2 doped AlN ceramics was found to be a little complicated, however addition of ZrO
2 was effective in the densification of the AlN ceramics. tan
δ is found to increase from less than 1
×
10
−3 to around 6
×
10
−3 when ZrO
2 content was more than 0.1
mol.%. |
| doi_str_mv | 10.1016/j.ceramint.2005.09.015 |
| format | Article |
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2O
3 and ZrO
2 were added as sintering additives to AlN powder and pressureless sintering was performed at 1900
°C for 2
h in a flowing nitrogen atmosphere. ZrN phase was detected in AlN ceramics when ZrO
2 addition was more than 0.1
mol.%. Densification behavior of both Y
2O
3 and ZrO
2 doped AlN ceramics was found to be a little complicated, however addition of ZrO
2 was effective in the densification of the AlN ceramics. tan
δ is found to increase from less than 1
×
10
−3 to around 6
×
10
−3 when ZrO
2 content was more than 0.1
mol.%.</description><identifier>ISSN: 0272-8842</identifier><identifier>EISSN: 1873-3956</identifier><identifier>DOI: 10.1016/j.ceramint.2005.09.015</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>AlN ; Applied sciences ; Building materials. Ceramics. Glasses ; C. Dielectric properties ; Ceramic industries ; Chemical industry and chemicals ; D. Y 2O 3 ; D. ZrO 2 ; Electrotechnical and electronic ceramics ; Exact sciences and technology ; Technical ceramics</subject><ispartof>Ceramics international, 2007-01, Vol.33 (2), p.269-272</ispartof><rights>2005 Elsevier Ltd and Techna Group S.r.l.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-18c04cd8cc1f7acbddf50d5016db870995412ab367f10701c72945cdea43d1543</citedby><cites>FETCH-LOGICAL-c373t-18c04cd8cc1f7acbddf50d5016db870995412ab367f10701c72945cdea43d1543</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0272884205002786$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18436095$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kume, Shoichi</creatorcontrib><creatorcontrib>Yasuoka, Masaki</creatorcontrib><creatorcontrib>Omura, Naoki</creatorcontrib><creatorcontrib>Watari, Koji</creatorcontrib><title>Effect of zirconia addition on dielectric loss and microstructure of aluminum nitride ceramics</title><title>Ceramics international</title><description>The effects of sintering additives on dielectric loss tangent of AlN ceramics have been investigated. Different amounts of Y
2O
3 and ZrO
2 were added as sintering additives to AlN powder and pressureless sintering was performed at 1900
°C for 2
h in a flowing nitrogen atmosphere. ZrN phase was detected in AlN ceramics when ZrO
2 addition was more than 0.1
mol.%. Densification behavior of both Y
2O
3 and ZrO
2 doped AlN ceramics was found to be a little complicated, however addition of ZrO
2 was effective in the densification of the AlN ceramics. tan
δ is found to increase from less than 1
×
10
−3 to around 6
×
10
−3 when ZrO
2 content was more than 0.1
mol.%.</description><subject>AlN</subject><subject>Applied sciences</subject><subject>Building materials. Ceramics. Glasses</subject><subject>C. Dielectric properties</subject><subject>Ceramic industries</subject><subject>Chemical industry and chemicals</subject><subject>D. Y 2O 3</subject><subject>D. ZrO 2</subject><subject>Electrotechnical and electronic ceramics</subject><subject>Exact sciences and technology</subject><subject>Technical ceramics</subject><issn>0272-8842</issn><issn>1873-3956</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LxDAURYMoOI7-BclGd60vbdM0O2XwCwbc6NaQeUkgQz_GpBX015syIy6FQBY5N_e9Q8glg5wBq2-2OdqgO9-PeQHAc5A5MH5EFqwRZVZKXh-TBRSiyJqmKk7JWYxbSEFZwYK83ztncaSDo98-4NB7TbUxfvRDT9Mx3rbpPXik7RAj1b2hnccwxDFMOE7BzlHdTql_6mjvE2os3U-E8ZycON1Ge3G4l-Tt4f519ZStXx6fV3frDEtRjhlrECo0DSJzQuPGGMfB8DSk2TQCpOQVK_SmrIVjIIChKGTF0VhdlYbxqlyS6_2_uzB8TDaOqvMRbdvq3g5TVEWTNAgOCaz34LxCDNapXfCdDl-KgZp1qq361almnQqkSjpT8OrQoCPq1gXdo49_6aYqa5Azd7vnbFr309ugInrbozU-JJHKDP6_qh-JuJBR</recordid><startdate>20070101</startdate><enddate>20070101</enddate><creator>Kume, Shoichi</creator><creator>Yasuoka, Masaki</creator><creator>Omura, Naoki</creator><creator>Watari, Koji</creator><general>Elsevier Ltd</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20070101</creationdate><title>Effect of zirconia addition on dielectric loss and microstructure of aluminum nitride ceramics</title><author>Kume, Shoichi ; Yasuoka, Masaki ; Omura, Naoki ; Watari, Koji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-18c04cd8cc1f7acbddf50d5016db870995412ab367f10701c72945cdea43d1543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>AlN</topic><topic>Applied sciences</topic><topic>Building materials. Ceramics. Glasses</topic><topic>C. Dielectric properties</topic><topic>Ceramic industries</topic><topic>Chemical industry and chemicals</topic><topic>D. Y 2O 3</topic><topic>D. ZrO 2</topic><topic>Electrotechnical and electronic ceramics</topic><topic>Exact sciences and technology</topic><topic>Technical ceramics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kume, Shoichi</creatorcontrib><creatorcontrib>Yasuoka, Masaki</creatorcontrib><creatorcontrib>Omura, Naoki</creatorcontrib><creatorcontrib>Watari, Koji</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Ceramics international</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kume, Shoichi</au><au>Yasuoka, Masaki</au><au>Omura, Naoki</au><au>Watari, Koji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of zirconia addition on dielectric loss and microstructure of aluminum nitride ceramics</atitle><jtitle>Ceramics international</jtitle><date>2007-01-01</date><risdate>2007</risdate><volume>33</volume><issue>2</issue><spage>269</spage><epage>272</epage><pages>269-272</pages><issn>0272-8842</issn><eissn>1873-3956</eissn><abstract>The effects of sintering additives on dielectric loss tangent of AlN ceramics have been investigated. Different amounts of Y
2O
3 and ZrO
2 were added as sintering additives to AlN powder and pressureless sintering was performed at 1900
°C for 2
h in a flowing nitrogen atmosphere. ZrN phase was detected in AlN ceramics when ZrO
2 addition was more than 0.1
mol.%. Densification behavior of both Y
2O
3 and ZrO
2 doped AlN ceramics was found to be a little complicated, however addition of ZrO
2 was effective in the densification of the AlN ceramics. tan
δ is found to increase from less than 1
×
10
−3 to around 6
×
10
−3 when ZrO
2 content was more than 0.1
mol.%.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.ceramint.2005.09.015</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0272-8842 |
| ispartof | Ceramics international, 2007-01, Vol.33 (2), p.269-272 |
| issn | 0272-8842 1873-3956 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28956750 |
| source | Elsevier ScienceDirect Journals |
| subjects | AlN Applied sciences Building materials. Ceramics. Glasses C. Dielectric properties Ceramic industries Chemical industry and chemicals D. Y 2O 3 D. ZrO 2 Electrotechnical and electronic ceramics Exact sciences and technology Technical ceramics |
| title | Effect of zirconia addition on dielectric loss and microstructure of aluminum nitride ceramics |
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