Metal–semiconductor interfaces in CdTe crystals and modification of their properties by laser pulses
Current–voltage characteristics (CVC) have been investigated in high-resistivity CdTe(1 1 1) crystals with different electrodes (Ag, In and Au) which were deposited before different surface treatments. An influence of laser irradiation with nanosecond KrF laser pulses on the metal–CdTe interfaces, h...
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Veröffentlicht in: | Applied surface science 2005-05, Vol.244 (1), p.528-532 |
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creator | Gnatyuk, V.A. Aoki, T. Hatanaka, Y. Vlasenko, O.I. |
description | Current–voltage characteristics (CVC) have been investigated in high-resistivity CdTe(1
1
1) crystals with different electrodes (Ag, In and Au) which were deposited before different surface treatments. An influence of laser irradiation with nanosecond KrF laser pulses on the metal–CdTe interfaces, has been studied. Laser irradiation of CdTe crystals before and after electrodes deposition transformed the structure of the near surface and interface regions, respectively, and changed CVC of the barrier structures. Irradiation of CdTe crystals from the In contact side resulted in In doping. The laser-formed In/CdTe/Au diode structures had good rectification properties and showed promise for nuclear radiation detectors. |
doi_str_mv | 10.1016/j.apsusc.2004.10.113 |
format | Article |
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1
1) crystals with different electrodes (Ag, In and Au) which were deposited before different surface treatments. An influence of laser irradiation with nanosecond KrF laser pulses on the metal–CdTe interfaces, has been studied. Laser irradiation of CdTe crystals before and after electrodes deposition transformed the structure of the near surface and interface regions, respectively, and changed CVC of the barrier structures. Irradiation of CdTe crystals from the In contact side resulted in In doping. The laser-formed In/CdTe/Au diode structures had good rectification properties and showed promise for nuclear radiation detectors.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2004.10.113</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Barrier structure ; CdTe crystal ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Current–voltage characteristic ; Doping ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Laser irradiation ; Metal-semiconductor-metal structures ; Nuclear detector ; Physical radiation effects, radiation damage ; Physics ; Structure of solids and liquids; crystallography ; Ultraviolet, visible, and infrared radiation effects (including laser radiation)</subject><ispartof>Applied surface science, 2005-05, Vol.244 (1), p.528-532</ispartof><rights>2004 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-43edb74e9846d6b132189d3bfb7b8f75156ba56cedf70e34b4aad51c42179ba13</citedby><cites>FETCH-LOGICAL-c367t-43edb74e9846d6b132189d3bfb7b8f75156ba56cedf70e34b4aad51c42179ba13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0169433204017593$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16720853$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Gnatyuk, V.A.</creatorcontrib><creatorcontrib>Aoki, T.</creatorcontrib><creatorcontrib>Hatanaka, Y.</creatorcontrib><creatorcontrib>Vlasenko, O.I.</creatorcontrib><title>Metal–semiconductor interfaces in CdTe crystals and modification of their properties by laser pulses</title><title>Applied surface science</title><description>Current–voltage characteristics (CVC) have been investigated in high-resistivity CdTe(1
1
1) crystals with different electrodes (Ag, In and Au) which were deposited before different surface treatments. An influence of laser irradiation with nanosecond KrF laser pulses on the metal–CdTe interfaces, has been studied. Laser irradiation of CdTe crystals before and after electrodes deposition transformed the structure of the near surface and interface regions, respectively, and changed CVC of the barrier structures. Irradiation of CdTe crystals from the In contact side resulted in In doping. The laser-formed In/CdTe/Au diode structures had good rectification properties and showed promise for nuclear radiation detectors.</description><subject>Barrier structure</subject><subject>CdTe crystal</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Current–voltage characteristic</subject><subject>Doping</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Laser irradiation</subject><subject>Metal-semiconductor-metal structures</subject><subject>Nuclear detector</subject><subject>Physical radiation effects, radiation damage</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Ultraviolet, visible, and infrared radiation effects (including laser radiation)</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kM1qGzEUhUVJoY7bN-hCm2Q3jjTS_G0KwSRtISEbdy30c0VlxiNHVxPwLu_QN-yTVK4N2WUlcfSde48OIV85W3HG25vtSu9xRruqGZOro8rFB7LgfSeqpunlBVkUbKikEPUncom4ZYzX5XVB_CNkPf59_YOwCzZObrY5JhqmDMlrC1iudO02QG06YEGR6snRXXTBB6tziBONnubfEBLdp7iHlENxmQMdNULR5hEBP5OPvnjhy_lckl_3d5v1j-rh6fvP9e1DZUXb5RIQnOkkDL1sXWu4qHk_OGG86Uzvu4Y3rdFNa8H5joGQRmrtGm5lzbvBaC6W5Po0t0R5ngGz2gW0MI56gjijqvtBDEPTF1CeQJsiYgKv9insdDooztSxVLVVp1LVsdT_KhfFdnWer9Hq0Sc92YBv3rarWd8cuW8nDspnXwIkhTbAVIKHBDYrF8P7i_4B4ZySWQ</recordid><startdate>20050515</startdate><enddate>20050515</enddate><creator>Gnatyuk, V.A.</creator><creator>Aoki, T.</creator><creator>Hatanaka, Y.</creator><creator>Vlasenko, O.I.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050515</creationdate><title>Metal–semiconductor interfaces in CdTe crystals and modification of their properties by laser pulses</title><author>Gnatyuk, V.A. ; Aoki, T. ; Hatanaka, Y. ; Vlasenko, O.I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-43edb74e9846d6b132189d3bfb7b8f75156ba56cedf70e34b4aad51c42179ba13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Barrier structure</topic><topic>CdTe crystal</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Current–voltage characteristic</topic><topic>Doping</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>Laser irradiation</topic><topic>Metal-semiconductor-metal structures</topic><topic>Nuclear detector</topic><topic>Physical radiation effects, radiation damage</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Ultraviolet, visible, and infrared radiation effects (including laser radiation)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gnatyuk, V.A.</creatorcontrib><creatorcontrib>Aoki, T.</creatorcontrib><creatorcontrib>Hatanaka, Y.</creatorcontrib><creatorcontrib>Vlasenko, O.I.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gnatyuk, V.A.</au><au>Aoki, T.</au><au>Hatanaka, Y.</au><au>Vlasenko, O.I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Metal–semiconductor interfaces in CdTe crystals and modification of their properties by laser pulses</atitle><jtitle>Applied surface science</jtitle><date>2005-05-15</date><risdate>2005</risdate><volume>244</volume><issue>1</issue><spage>528</spage><epage>532</epage><pages>528-532</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>Current–voltage characteristics (CVC) have been investigated in high-resistivity CdTe(1
1
1) crystals with different electrodes (Ag, In and Au) which were deposited before different surface treatments. An influence of laser irradiation with nanosecond KrF laser pulses on the metal–CdTe interfaces, has been studied. Laser irradiation of CdTe crystals before and after electrodes deposition transformed the structure of the near surface and interface regions, respectively, and changed CVC of the barrier structures. Irradiation of CdTe crystals from the In contact side resulted in In doping. The laser-formed In/CdTe/Au diode structures had good rectification properties and showed promise for nuclear radiation detectors.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2004.10.113</doi><tpages>5</tpages></addata></record> |
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subjects | Barrier structure CdTe crystal Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Current–voltage characteristic Doping Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Laser irradiation Metal-semiconductor-metal structures Nuclear detector Physical radiation effects, radiation damage Physics Structure of solids and liquids crystallography Ultraviolet, visible, and infrared radiation effects (including laser radiation) |
title | Metal–semiconductor interfaces in CdTe crystals and modification of their properties by laser pulses |
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