A multimechanism model for photon generation by silicon junctions in avalanche breakdown
Light emission from three device types ((1) commercial silicon JFETs, (2) bipolar transistors, and (3) a custom diode) with p-n junctions biased in controlled avalanche breakdown, has been measured over the photon energy range 1.4-3.4 eV, Previously published models are compared with these data to e...
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| Veröffentlicht in: | IEEE transactions on electron devices 1999-05, Vol.46 (5), p.1022-1028 |
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| container_end_page | 1028 |
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| container_issue | 5 |
| container_start_page | 1022 |
| container_title | IEEE transactions on electron devices |
| container_volume | 46 |
| creator | Akil, N. Kerns, S.E. Kerns, D.V. Hoffmann, A. Charles, J.-P. |
| description | Light emission from three device types ((1) commercial silicon JFETs, (2) bipolar transistors, and (3) a custom diode) with p-n junctions biased in controlled avalanche breakdown, has been measured over the photon energy range 1.4-3.4 eV, Previously published models are compared with these data to elucidate the mechanisms responsible for avalanche light emission in silicon. A multimechanism model fitting measured spectra and spectra measured by other researchers is presented and justified. The success of the model indicates that indirect recombination of electrons and holes is the dominant emission mechanism below the light intensity peak (/spl sim/1.8-2.0 eV), that indirect intraband recombination dominates at intermediate energies up to /spl sim/2.3 eV, and that direct interband recombination between high-field populations of carriers near k=0 dominates above /spl sim/2.3 eV. For junctions with overlayer passivation, an interference model must be applied to model measured spectra. |
| doi_str_mv | 10.1109/16.760412 |
| format | Article |
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A multimechanism model fitting measured spectra and spectra measured by other researchers is presented and justified. The success of the model indicates that indirect recombination of electrons and holes is the dominant emission mechanism below the light intensity peak (/spl sim/1.8-2.0 eV), that indirect intraband recombination dominates at intermediate energies up to /spl sim/2.3 eV, and that direct interband recombination between high-field populations of carriers near k=0 dominates above /spl sim/2.3 eV. 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A multimechanism model fitting measured spectra and spectra measured by other researchers is presented and justified. The success of the model indicates that indirect recombination of electrons and holes is the dominant emission mechanism below the light intensity peak (/spl sim/1.8-2.0 eV), that indirect intraband recombination dominates at intermediate energies up to /spl sim/2.3 eV, and that direct interband recombination between high-field populations of carriers near k=0 dominates above /spl sim/2.3 eV. For junctions with overlayer passivation, an interference model must be applied to model measured spectra.</description><subject>Avalanche breakdown</subject><subject>Avalanche diodes</subject><subject>Bipolar transistors</subject><subject>Breakdown</subject><subject>Devices</subject><subject>Diodes</subject><subject>Energy measurement</subject><subject>Fittings</subject><subject>JFETs</subject><subject>Light emission</subject><subject>Lighting control</subject><subject>Optical control</subject><subject>P-n junctions</subject><subject>Photons</subject><subject>Silicon</subject><subject>Spectra</subject><subject>Spontaneous emission</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkbtPwzAQxi0EEqUwsDJ5AjGk-JH4MVYVL6kSC0hskeOcqUsSlzgB9b8nVSpGYLrv7n767qQPoXNKZpQSfUPFTAqSUnaAJjTLZKJFKg7RhBCqEs0VP0YnMa6HVqQpm6DXOa77qvM12JVpfKxxHUqosAst3qxCFxr8Bg20pvODLLY4-srbQa77xu5mEfsGm09TmcauABctmPcyfDWn6MiZKsLZvk7Ry93t8-IhWT7dPy7my8RySbsEFJPcKm2oLhR1jNqi1EymBgrQouBSSwKZKgsORBFmyrR0zilnhHWO8YJP0dXou2nDRw-xy2sfLVTDPxD6mGuqNRWKZQN5-SvJlOaapeofINcypfxvUBI-WO5OX4-gbUOMLbh80_ratNucknyXW05FPuY2sBcj6wHgh9svvwECqpOP</recordid><startdate>19990501</startdate><enddate>19990501</enddate><creator>Akil, N.</creator><creator>Kerns, S.E.</creator><creator>Kerns, D.V.</creator><creator>Hoffmann, A.</creator><creator>Charles, J.-P.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>19990501</creationdate><title>A multimechanism model for photon generation by silicon junctions in avalanche breakdown</title><author>Akil, N. ; Kerns, S.E. ; Kerns, D.V. ; Hoffmann, A. ; Charles, J.-P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-e8273c89a19b81f21cbd9274aebe96b37970e58db3e0802ad4dfff8fa6cff23b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Avalanche breakdown</topic><topic>Avalanche diodes</topic><topic>Bipolar transistors</topic><topic>Breakdown</topic><topic>Devices</topic><topic>Diodes</topic><topic>Energy measurement</topic><topic>Fittings</topic><topic>JFETs</topic><topic>Light emission</topic><topic>Lighting control</topic><topic>Optical control</topic><topic>P-n junctions</topic><topic>Photons</topic><topic>Silicon</topic><topic>Spectra</topic><topic>Spontaneous emission</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Akil, N.</creatorcontrib><creatorcontrib>Kerns, S.E.</creatorcontrib><creatorcontrib>Kerns, D.V.</creatorcontrib><creatorcontrib>Hoffmann, A.</creatorcontrib><creatorcontrib>Charles, J.-P.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Akil, N.</au><au>Kerns, S.E.</au><au>Kerns, D.V.</au><au>Hoffmann, A.</au><au>Charles, J.-P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A multimechanism model for photon generation by silicon junctions in avalanche breakdown</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1999-05-01</date><risdate>1999</risdate><volume>46</volume><issue>5</issue><spage>1022</spage><epage>1028</epage><pages>1022-1028</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Light emission from three device types ((1) commercial silicon JFETs, (2) bipolar transistors, and (3) a custom diode) with p-n junctions biased in controlled avalanche breakdown, has been measured over the photon energy range 1.4-3.4 eV, Previously published models are compared with these data to elucidate the mechanisms responsible for avalanche light emission in silicon. A multimechanism model fitting measured spectra and spectra measured by other researchers is presented and justified. The success of the model indicates that indirect recombination of electrons and holes is the dominant emission mechanism below the light intensity peak (/spl sim/1.8-2.0 eV), that indirect intraband recombination dominates at intermediate energies up to /spl sim/2.3 eV, and that direct interband recombination between high-field populations of carriers near k=0 dominates above /spl sim/2.3 eV. For junctions with overlayer passivation, an interference model must be applied to model measured spectra.</abstract><pub>IEEE</pub><doi>10.1109/16.760412</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1999-05, Vol.46 (5), p.1022-1028 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Avalanche breakdown Avalanche diodes Bipolar transistors Breakdown Devices Diodes Energy measurement Fittings JFETs Light emission Lighting control Optical control P-n junctions Photons Silicon Spectra Spontaneous emission |
| title | A multimechanism model for photon generation by silicon junctions in avalanche breakdown |
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