High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

Record performance of high-power GaN/Al/sub 0.14/-Ga/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported. Devices of 0.125-0.25 mm gate periphery show high CW power densities between 5.3 and 6.9 W/mm, with a typical power-added effic...

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Veröffentlicht in:	IEEE electron device letters 1999-04, Vol.20 (4), p.161-163
Hauptverfasser:	Sheppard, S.T., Doverspike, K., Pribble, W.L., Allen, S.T., Palmour, J.W., Kehias, L.T., Jenkins, T.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Density Devices Gain Gain measurement Gallium nitride Gallium nitrides HEMTs High electron mobility transistors Microwave devices MODFETs Noise levels Packaging Power generation Power measurement Semiconductor devices Silicon Silicon substrates
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