High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Record performance of high-power GaN/Al/sub 0.14/-Ga/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported. Devices of 0.125-0.25 mm gate periphery show high CW power densities between 5.3 and 6.9 W/mm, with a typical power-added effic...
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| Veröffentlicht in: | IEEE electron device letters 1999-04, Vol.20 (4), p.161-163 |
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| container_title | IEEE electron device letters |
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| creator | Sheppard, S.T. Doverspike, K. Pribble, W.L. Allen, S.T. Palmour, J.W. Kehias, L.T. Jenkins, T.J. |
| description | Record performance of high-power GaN/Al/sub 0.14/-Ga/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported. Devices of 0.125-0.25 mm gate periphery show high CW power densities between 5.3 and 6.9 W/mm, with a typical power-added efficiency (PAE) of 35.4% and an associated gain of 9.2 dB at 10 GHz. High-electron mobility transistors with 1.5-mm gate widths (12×125 μm), measured on-wafer, exhibit a total output power of 3.9 W CW (2.6 W/mm) at 10 GHz with a PAE of 29% and an associated gain of 10 dB at the -2 dB compression point. A 3-mm HEMT, packaged with a hybrid matching circuit, demonstrated 9.1 W CW at 7.4 GHz with a PAE of 29.6% and a gain of 7.1 dB. These data represent the highest power density, total power, and associated gain demonstrated for a III-nitride HEMT under RF drive. |
| doi_str_mv | 10.1109/55.753753 |
| format | Article |
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Devices of 0.125-0.25 mm gate periphery show high CW power densities between 5.3 and 6.9 W/mm, with a typical power-added efficiency (PAE) of 35.4% and an associated gain of 9.2 dB at 10 GHz. High-electron mobility transistors with 1.5-mm gate widths (12×125 μm), measured on-wafer, exhibit a total output power of 3.9 W CW (2.6 W/mm) at 10 GHz with a PAE of 29% and an associated gain of 10 dB at the -2 dB compression point. A 3-mm HEMT, packaged with a hybrid matching circuit, demonstrated 9.1 W CW at 7.4 GHz with a PAE of 29.6% and a gain of 7.1 dB. 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Devices of 0.125-0.25 mm gate periphery show high CW power densities between 5.3 and 6.9 W/mm, with a typical power-added efficiency (PAE) of 35.4% and an associated gain of 9.2 dB at 10 GHz. High-electron mobility transistors with 1.5-mm gate widths (12×125 μm), measured on-wafer, exhibit a total output power of 3.9 W CW (2.6 W/mm) at 10 GHz with a PAE of 29% and an associated gain of 10 dB at the -2 dB compression point. A 3-mm HEMT, packaged with a hybrid matching circuit, demonstrated 9.1 W CW at 7.4 GHz with a PAE of 29.6% and a gain of 7.1 dB. These data represent the highest power density, total power, and associated gain demonstrated for a III-nitride HEMT under RF drive.</description><subject>Aluminum gallium nitride</subject><subject>Density</subject><subject>Devices</subject><subject>Gain</subject><subject>Gain measurement</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Microwave devices</subject><subject>MODFETs</subject><subject>Noise levels</subject><subject>Packaging</subject><subject>Power generation</subject><subject>Power measurement</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>Silicon substrates</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0U1Lw0AQBuBFFKzVg1dPOYke0u7s9x5Lqa3gB0g9h812UlfSpmYTi__eSItHLSyzMPMwh3kJuQQ6AKB2KOVAS969I9IDKU1KpeLHpEe1gJQDVafkLMZ3SkEILXrkZRaWb-mm2mKdrIKvq637xGTqnoajsqvJbPI4j0m1TiKuQhrWsS1dE9bLJIYy-K7vXZ2HBSaxzWNTuwbjOTkpXBnxYv_3yevdZD6epQ_P0_vx6CH1QtkmlQY4s1gAmkJoCbkyVoH1fpFTpvMcrZXMioJq541YICuUkd5qQLBmwSjvk-vd3k1dfbQYm2wVoseydGus2pgxY7kUcAjUWkjgB0AulBDmf6iskoyLDt78CUFpYJZ1h-jo7Y52IcRYY5Ft6rBy9VcGNPvJNpMy22Xb2audDYj46_bDb5xMnEU</recordid><startdate>19990401</startdate><enddate>19990401</enddate><creator>Sheppard, S.T.</creator><creator>Doverspike, K.</creator><creator>Pribble, W.L.</creator><creator>Allen, S.T.</creator><creator>Palmour, J.W.</creator><creator>Kehias, L.T.</creator><creator>Jenkins, T.J.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><scope>7U5</scope><scope>7QF</scope><scope>8BQ</scope></search><sort><creationdate>19990401</creationdate><title>High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates</title><author>Sheppard, S.T. ; Doverspike, K. ; Pribble, W.L. ; Allen, S.T. ; Palmour, J.W. ; Kehias, L.T. ; Jenkins, T.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c469t-581329ef1e8f4751b689619ccdb027bbe995294f07ac84de2f685c971e198d203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Aluminum gallium nitride</topic><topic>Density</topic><topic>Devices</topic><topic>Gain</topic><topic>Gain measurement</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>Microwave devices</topic><topic>MODFETs</topic><topic>Noise levels</topic><topic>Packaging</topic><topic>Power generation</topic><topic>Power measurement</topic><topic>Semiconductor devices</topic><topic>Silicon</topic><topic>Silicon substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sheppard, S.T.</creatorcontrib><creatorcontrib>Doverspike, K.</creatorcontrib><creatorcontrib>Pribble, W.L.</creatorcontrib><creatorcontrib>Allen, S.T.</creatorcontrib><creatorcontrib>Palmour, J.W.</creatorcontrib><creatorcontrib>Kehias, L.T.</creatorcontrib><creatorcontrib>Jenkins, T.J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sheppard, S.T.</au><au>Doverspike, K.</au><au>Pribble, W.L.</au><au>Allen, S.T.</au><au>Palmour, J.W.</au><au>Kehias, L.T.</au><au>Jenkins, T.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1999-04-01</date><risdate>1999</risdate><volume>20</volume><issue>4</issue><spage>161</spage><epage>163</epage><pages>161-163</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Record performance of high-power GaN/Al/sub 0.14/-Ga/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported. Devices of 0.125-0.25 mm gate periphery show high CW power densities between 5.3 and 6.9 W/mm, with a typical power-added efficiency (PAE) of 35.4% and an associated gain of 9.2 dB at 10 GHz. High-electron mobility transistors with 1.5-mm gate widths (12×125 μm), measured on-wafer, exhibit a total output power of 3.9 W CW (2.6 W/mm) at 10 GHz with a PAE of 29% and an associated gain of 10 dB at the -2 dB compression point. A 3-mm HEMT, packaged with a hybrid matching circuit, demonstrated 9.1 W CW at 7.4 GHz with a PAE of 29.6% and a gain of 7.1 dB. These data represent the highest power density, total power, and associated gain demonstrated for a III-nitride HEMT under RF drive.</abstract><pub>IEEE</pub><doi>10.1109/55.753753</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1999-04, Vol.20 (4), p.161-163 |
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| subjects | Aluminum gallium nitride Density Devices Gain Gain measurement Gallium nitride Gallium nitrides HEMTs High electron mobility transistors Microwave devices MODFETs Noise levels Packaging Power generation Power measurement Semiconductor devices Silicon Silicon substrates |
| title | High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates |
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