Classification of microdefects in semiconducting silicon

On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is...

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Veröffentlicht in:	Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2003-12, Vol.6 (4), p.431-436
1. Verfasser:	Talanin, V.I.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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