Low-defect-density and high-reliability FETMOS EEPROM''s fabricatedusing furnace N(2)O oxynitridation

The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EEPROMs fabricated using a furnace N(2)O oxynitridation process are described. These devices exhibited about eight times better endurance and good data retention characteristics while maintaining defect density comparable...

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Veröffentlicht in:	IEEE electron device letters 1993-07, Vol.14 (7), p.342-344
Hauptverfasser:	Kim, Y-S, Okada, Y, Chang, K-M, Tobin, P J, Morton, B, Choe, H, Bowers, M, Kuo, C, Chrudimsky, D, Ajuria, S A, Yeargain, J R
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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