Low-defect-density and high-reliability FETMOS EEPROM''s fabricatedusing furnace N(2)O oxynitridation
The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EEPROMs fabricated using a furnace N(2)O oxynitridation process are described. These devices exhibited about eight times better endurance and good data retention characteristics while maintaining defect density comparable...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 1993-07, Vol.14 (7), p.342-344 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 344 |
|---|---|
| container_issue | 7 |
| container_start_page | 342 |
| container_title | IEEE electron device letters |
| container_volume | 14 |
| creator | Kim, Y-S Okada, Y Chang, K-M Tobin, P J Morton, B Choe, H Bowers, M Kuo, C Chrudimsky, D Ajuria, S A Yeargain, J R |
| description | The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EEPROMs fabricated using a furnace N(2)O oxynitridation process are described. These devices exhibited about eight times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-wafer |
| doi_str_mv | 10.1109/55.225567 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_28926794</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28926794</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_289267943</originalsourceid><addsrcrecordid>eNqNjLFuwjAUAD1QCWgZ-ANPQIdQ2zgJmaugDqWpWnZkkhd4yNitnyPg70ulfkCnk06nY2wsxVxKUTyl6VypNM3yHhuIXMtkIUXWZ0OioxBS61wPGLz6c9JAC3W8wRHGKzeu4QfcH5IAFs0O7a9clZt19cnL8v2jWk-nxFuzC1ibCE1H6Pa87YIzNfC3mXqsuL9cHcaAjYno3QO7a40lGP3xnk1uv-eX5Cv47w4obk9INVhrHPiOtmpZqCwv9OLf4Q8a3kuF</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28926794</pqid></control><display><type>article</type><title>Low-defect-density and high-reliability FETMOS EEPROM''s fabricatedusing furnace N(2)O oxynitridation</title><source>IEEE Electronic Library (IEL)</source><creator>Kim, Y-S ; Okada, Y ; Chang, K-M ; Tobin, P J ; Morton, B ; Choe, H ; Bowers, M ; Kuo, C ; Chrudimsky, D ; Ajuria, S A ; Yeargain, J R</creator><creatorcontrib>Kim, Y-S ; Okada, Y ; Chang, K-M ; Tobin, P J ; Morton, B ; Choe, H ; Bowers, M ; Kuo, C ; Chrudimsky, D ; Ajuria, S A ; Yeargain, J R</creatorcontrib><description>The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EEPROMs fabricated using a furnace N(2)O oxynitridation process are described. These devices exhibited about eight times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-wafer</description><identifier>ISSN: 0741-3106</identifier><identifier>DOI: 10.1109/55.225567</identifier><language>eng</language><ispartof>IEEE electron device letters, 1993-07, Vol.14 (7), p.342-344</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27928,27929</link.rule.ids></links><search><creatorcontrib>Kim, Y-S</creatorcontrib><creatorcontrib>Okada, Y</creatorcontrib><creatorcontrib>Chang, K-M</creatorcontrib><creatorcontrib>Tobin, P J</creatorcontrib><creatorcontrib>Morton, B</creatorcontrib><creatorcontrib>Choe, H</creatorcontrib><creatorcontrib>Bowers, M</creatorcontrib><creatorcontrib>Kuo, C</creatorcontrib><creatorcontrib>Chrudimsky, D</creatorcontrib><creatorcontrib>Ajuria, S A</creatorcontrib><creatorcontrib>Yeargain, J R</creatorcontrib><title>Low-defect-density and high-reliability FETMOS EEPROM''s fabricatedusing furnace N(2)O oxynitridation</title><title>IEEE electron device letters</title><description>The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EEPROMs fabricated using a furnace N(2)O oxynitridation process are described. These devices exhibited about eight times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-wafer</description><issn>0741-3106</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNqNjLFuwjAUAD1QCWgZ-ANPQIdQ2zgJmaugDqWpWnZkkhd4yNitnyPg70ulfkCnk06nY2wsxVxKUTyl6VypNM3yHhuIXMtkIUXWZ0OioxBS61wPGLz6c9JAC3W8wRHGKzeu4QfcH5IAFs0O7a9clZt19cnL8v2jWk-nxFuzC1ibCE1H6Pa87YIzNfC3mXqsuL9cHcaAjYno3QO7a40lGP3xnk1uv-eX5Cv47w4obk9INVhrHPiOtmpZqCwv9OLf4Q8a3kuF</recordid><startdate>19930701</startdate><enddate>19930701</enddate><creator>Kim, Y-S</creator><creator>Okada, Y</creator><creator>Chang, K-M</creator><creator>Tobin, P J</creator><creator>Morton, B</creator><creator>Choe, H</creator><creator>Bowers, M</creator><creator>Kuo, C</creator><creator>Chrudimsky, D</creator><creator>Ajuria, S A</creator><creator>Yeargain, J R</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19930701</creationdate><title>Low-defect-density and high-reliability FETMOS EEPROM''s fabricatedusing furnace N(2)O oxynitridation</title><author>Kim, Y-S ; Okada, Y ; Chang, K-M ; Tobin, P J ; Morton, B ; Choe, H ; Bowers, M ; Kuo, C ; Chrudimsky, D ; Ajuria, S A ; Yeargain, J R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_289267943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Y-S</creatorcontrib><creatorcontrib>Okada, Y</creatorcontrib><creatorcontrib>Chang, K-M</creatorcontrib><creatorcontrib>Tobin, P J</creatorcontrib><creatorcontrib>Morton, B</creatorcontrib><creatorcontrib>Choe, H</creatorcontrib><creatorcontrib>Bowers, M</creatorcontrib><creatorcontrib>Kuo, C</creatorcontrib><creatorcontrib>Chrudimsky, D</creatorcontrib><creatorcontrib>Ajuria, S A</creatorcontrib><creatorcontrib>Yeargain, J R</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Y-S</au><au>Okada, Y</au><au>Chang, K-M</au><au>Tobin, P J</au><au>Morton, B</au><au>Choe, H</au><au>Bowers, M</au><au>Kuo, C</au><au>Chrudimsky, D</au><au>Ajuria, S A</au><au>Yeargain, J R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-defect-density and high-reliability FETMOS EEPROM''s fabricatedusing furnace N(2)O oxynitridation</atitle><jtitle>IEEE electron device letters</jtitle><date>1993-07-01</date><risdate>1993</risdate><volume>14</volume><issue>7</issue><spage>342</spage><epage>344</epage><pages>342-344</pages><issn>0741-3106</issn><abstract>The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EEPROMs fabricated using a furnace N(2)O oxynitridation process are described. These devices exhibited about eight times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-wafer</abstract><doi>10.1109/55.225567</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1993-07, Vol.14 (7), p.342-344 |
| issn | 0741-3106 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28926794 |
| source | IEEE Electronic Library (IEL) |
| title | Low-defect-density and high-reliability FETMOS EEPROM''s fabricatedusing furnace N(2)O oxynitridation |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T01%3A01%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low-defect-density%20and%20high-reliability%20FETMOS%20EEPROM''s%20fabricatedusing%20furnace%20N(2)O%20oxynitridation&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Kim,%20Y-S&rft.date=1993-07-01&rft.volume=14&rft.issue=7&rft.spage=342&rft.epage=344&rft.pages=342-344&rft.issn=0741-3106&rft_id=info:doi/10.1109/55.225567&rft_dat=%3Cproquest%3E28926794%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28926794&rft_id=info:pmid/&rfr_iscdi=true |