Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

We have succeeded in fabricating ultra-short 25-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates. The two-step-recessed gate technology and low temperature processing at below 300/spl deg/C allowed the fabrication of such ultra-short gates. DC measur...

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Veröffentlicht in:	IEEE electron device letters 2001-08, Vol.22 (8), p.367-369
Hauptverfasser:	Yamashita, Y., Endoh, A., Shinohara, K., Higashiwaki, M., Hikosaka, K., Mimura, T., Hiyamizu, S., Matsui, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cutoff frequency Devices Direct current Fabrication Gates HEMTs High electron mobility transistors Indium compounds Indium gallium arsenide Indium gallium arsenides Indium phosphide MODFETs Radio frequency Semiconductor devices Semiconductors Substrates Temperature Transistors
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