Heterodimensional FET with split drain

A modification to heterodimensional field effect transistors (HDFET) is introduced and demonstrated to provide novel switching capabilities. The modification consists of introducing a split drain into the HDFET structure allowing the transistor to operate as a single pole-double throw switch. By ext...

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Veröffentlicht in:	IEEE electron device letters 2004-11, Vol.25 (11), p.737-739
Hauptverfasser:	Tongwei Cheng, Mathewson, A., Kennedy, M.P., Greer, J.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties CMOS Contacts Design. Technologies. Operation analysis. Testing Devices Drains Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology FETs Germanium silicon alloys Integrated circuits Isolation technology Joining processes Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium Silicon substrates Substrates Switches Switching Switching, multiplexing, switched capacity circuits Transistors Voltage Wire
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