Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor

The LDD structure, where narrow, self-aligned n/sup -/ regions are introduced between the channel and the n/sup +/ source-drain diffusions of an IGFET to spread the high field at the drain pinchoff region and thus reduce the maximum field intensity, is analyzed. The design is shown, including optimi...

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Veröffentlicht in:	IEEE journal of solid-state circuits 1980-08, Vol.15 (4), p.424-432
Hauptverfasser:	Ogura, S., Tsang, P.J., Walker, W.W., Critchlow, D.L., Shepard, J.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron Breakdown voltage Circuits Design optimization Doping profiles FETs Frequency Insulation Threshold voltage Transconductance
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