A generalized Dirichlet principle for smoothing small-signalmeasurements MESFET

A generalized Dirichlet principle for smoothing small-signalmeasurements MESFET

We report the theory, implementation, and results of using a Poisson solver to compensate the measured values of drain conductance and transconductance in a nonlinear metal-semiconductor field-effect transistor so as to render them compatible with a large-signal model. The consequent restructuring o...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1999-05, Vol.47 (5), p.636-639
Hauptverfasser: Snider, A D, Winson, P
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container_title IEEE transactions on microwave theory and techniques
container_volume 47
creator Snider, A D
Winson, P
description We report the theory, implementation, and results of using a Poisson solver to compensate the measured values of drain conductance and transconductance in a nonlinear metal-semiconductor field-effect transistor so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited
doi_str_mv 10.1109/22.763166
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_28895094</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28895094</sourcerecordid><originalsourceid>FETCH-LOGICAL-p624-8a8d3443ec8c7cdb6cd1a66738703ad132b7ce48f82f27685550e19b08de78f13</originalsourceid><addsrcrecordid>eNqNjL1OwzAUhT2ARCkMvIEnthT_xb4Zq1IoUlEHuleOc5MaOU6wk4WnpxI8ANM539GnQ8gDZyvOWfUkxMpoybW-IgvGOBSVAnZDbnP-vKAqGSzIYU07jJhs8N_Y0GefvDsHnOiYfHR-DEjbIdHcD8N09rG7NBtCkX0XbejR5jlhj3HK9H378bI93pHr1oaM93-5JMfLutkV-8Pr22a9L0YtVAEWGqmURAfOuKbWruFWayPBMGkbLkVtHCpoQbTCaCjLkiGvagYNGmi5XJLH39sxDV8z5unU--wwBBtxmPNJAFQlq9Q_RCk4k0r-AA7XW_c</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28321034</pqid></control><display><type>article</type><title>A generalized Dirichlet principle for smoothing small-signalmeasurements MESFET</title><source>IEEE Electronic Library (IEL)</source><creator>Snider, A D ; Winson, P</creator><creatorcontrib>Snider, A D ; Winson, P</creatorcontrib><description>We report the theory, implementation, and results of using a Poisson solver to compensate the measured values of drain conductance and transconductance in a nonlinear metal-semiconductor field-effect transistor so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited</description><identifier>ISSN: 0018-9480</identifier><identifier>DOI: 10.1109/22.763166</identifier><language>eng</language><ispartof>IEEE transactions on microwave theory and techniques, 1999-05, Vol.47 (5), p.636-639</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Snider, A D</creatorcontrib><creatorcontrib>Winson, P</creatorcontrib><title>A generalized Dirichlet principle for smoothing small-signalmeasurements MESFET</title><title>IEEE transactions on microwave theory and techniques</title><description>We report the theory, implementation, and results of using a Poisson solver to compensate the measured values of drain conductance and transconductance in a nonlinear metal-semiconductor field-effect transistor so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited</description><issn>0018-9480</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqNjL1OwzAUhT2ARCkMvIEnthT_xb4Zq1IoUlEHuleOc5MaOU6wk4WnpxI8ANM539GnQ8gDZyvOWfUkxMpoybW-IgvGOBSVAnZDbnP-vKAqGSzIYU07jJhs8N_Y0GefvDsHnOiYfHR-DEjbIdHcD8N09rG7NBtCkX0XbejR5jlhj3HK9H378bI93pHr1oaM93-5JMfLutkV-8Pr22a9L0YtVAEWGqmURAfOuKbWruFWayPBMGkbLkVtHCpoQbTCaCjLkiGvagYNGmi5XJLH39sxDV8z5unU--wwBBtxmPNJAFQlq9Q_RCk4k0r-AA7XW_c</recordid><startdate>19990501</startdate><enddate>19990501</enddate><creator>Snider, A D</creator><creator>Winson, P</creator><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19990501</creationdate><title>A generalized Dirichlet principle for smoothing small-signalmeasurements MESFET</title><author>Snider, A D ; Winson, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p624-8a8d3443ec8c7cdb6cd1a66738703ad132b7ce48f82f27685550e19b08de78f13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Snider, A D</creatorcontrib><creatorcontrib>Winson, P</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Snider, A D</au><au>Winson, P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A generalized Dirichlet principle for smoothing small-signalmeasurements MESFET</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><date>1999-05-01</date><risdate>1999</risdate><volume>47</volume><issue>5</issue><spage>636</spage><epage>639</epage><pages>636-639</pages><issn>0018-9480</issn><abstract>We report the theory, implementation, and results of using a Poisson solver to compensate the measured values of drain conductance and transconductance in a nonlinear metal-semiconductor field-effect transistor so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited</abstract><doi>10.1109/22.763166</doi><tpages>4</tpages></addata></record>
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title A generalized Dirichlet principle for smoothing small-signalmeasurements MESFET
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T20%3A24%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20generalized%20Dirichlet%20principle%20for%20smoothing%20small-signalmeasurements%20MESFET&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Snider,%20A%20D&rft.date=1999-05-01&rft.volume=47&rft.issue=5&rft.spage=636&rft.epage=639&rft.pages=636-639&rft.issn=0018-9480&rft_id=info:doi/10.1109/22.763166&rft_dat=%3Cproquest%3E28895094%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28321034&rft_id=info:pmid/&rfr_iscdi=true