Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots
The effect of InxGal-xAs (x = 0.1, 0.2) asymmetric strain release layers (ASRLs) on the microstructural and the interband transition properties of InAs/GaAs quantum dots (QDs) grown by using molecular beam epitaxy (MBE) and atomic layer epitaxy was investigated by using high-resolution transmission...
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| Veröffentlicht in: | Journal of crystal growth 2005-03, Vol.275 (3-4), p.415-421 |
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| container_title | Journal of crystal growth |
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| creator | LIM, J. G PARK, Y. J PARK, C. G PARK, Y. M SONG, J. D CHOI, W. J HAN, I. K CHO, W. J LEE, J. I KIM, T. W KIM, H. S |
| description | The effect of InxGal-xAs (x = 0.1, 0.2) asymmetric strain release layers (ASRLs) on the microstructural and the interband transition properties of InAs/GaAs quantum dots (QDs) grown by using molecular beam epitaxy (MBE) and atomic layer epitaxy was investigated by using high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) measurements. When the thickness of the ASRL covering the QDs was increased in the range between 0 and 5 nm, the PL peak corresponding to the interband transitions shifted to longer wavelengths due to strain relaxation. However, when the thickness of the ASRL was increased above approximately 7 nm, the peak shifted to shorter wavelengths due to the local interdiffusion of In and Ga atoms between the InxGa1-xAs capping layer and the InAs QDs as a result of the localized strains in the InxGa1-xAs capping layer and the InAs QDs. These results provide important information on the tunable feasibility of the interband transitions in the TnAs/GaAs QDs utilizing the InxGa1-xAs capping layer. |
| doi_str_mv | 10.1016/j.jcrysgro.2004.12.015 |
| format | Article |
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G ; PARK, Y. J ; PARK, C. G ; PARK, Y. M ; SONG, J. D ; CHOI, W. J ; HAN, I. K ; CHO, W. J ; LEE, J. I ; KIM, T. W ; KIM, H. S</creator><creatorcontrib>LIM, J. G ; PARK, Y. J ; PARK, C. G ; PARK, Y. M ; SONG, J. D ; CHOI, W. J ; HAN, I. K ; CHO, W. J ; LEE, J. I ; KIM, T. W ; KIM, H. S</creatorcontrib><description>The effect of InxGal-xAs (x = 0.1, 0.2) asymmetric strain release layers (ASRLs) on the microstructural and the interband transition properties of InAs/GaAs quantum dots (QDs) grown by using molecular beam epitaxy (MBE) and atomic layer epitaxy was investigated by using high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) measurements. When the thickness of the ASRL covering the QDs was increased in the range between 0 and 5 nm, the PL peak corresponding to the interband transitions shifted to longer wavelengths due to strain relaxation. However, when the thickness of the ASRL was increased above approximately 7 nm, the peak shifted to shorter wavelengths due to the local interdiffusion of In and Ga atoms between the InxGa1-xAs capping layer and the InAs QDs as a result of the localized strains in the InxGa1-xAs capping layer and the InAs QDs. These results provide important information on the tunable feasibility of the interband transitions in the TnAs/GaAs QDs utilizing the InxGa1-xAs capping layer.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2004.12.015</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Iii-v semiconductors ; Materials science ; Nanoscale materials and structures: fabrication and characterization ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoluminescence ; Physics ; Quantum dots</subject><ispartof>Journal of crystal growth, 2005-03, Vol.275 (3-4), p.415-421</ispartof><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-104a557b4323a8633474b9919a6634ceeb20a3c6583c61b4397adc63d49de7773</citedby><cites>FETCH-LOGICAL-c316t-104a557b4323a8633474b9919a6634ceeb20a3c6583c61b4397adc63d49de7773</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16611575$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LIM, J. 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S</creatorcontrib><title>Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots</title><title>Journal of crystal growth</title><description>The effect of InxGal-xAs (x = 0.1, 0.2) asymmetric strain release layers (ASRLs) on the microstructural and the interband transition properties of InAs/GaAs quantum dots (QDs) grown by using molecular beam epitaxy (MBE) and atomic layer epitaxy was investigated by using high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) measurements. When the thickness of the ASRL covering the QDs was increased in the range between 0 and 5 nm, the PL peak corresponding to the interband transitions shifted to longer wavelengths due to strain relaxation. However, when the thickness of the ASRL was increased above approximately 7 nm, the peak shifted to shorter wavelengths due to the local interdiffusion of In and Ga atoms between the InxGa1-xAs capping layer and the InAs QDs as a result of the localized strains in the InxGa1-xAs capping layer and the InAs QDs. These results provide important information on the tunable feasibility of the interband transitions in the TnAs/GaAs QDs utilizing the InxGa1-xAs capping layer.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Iii-v semiconductors</subject><subject>Materials science</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Quantum dots</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNpFkMtOwzAQRS0EEuXxC8gb2CX4kTjJskJQkCqxgbU1dSbgKk1ajyPRFb-Oq4LYjL0493p8GLuRIpdCmvt1vnZhTx9hzJUQRS5VLmR5wmayrnRWCqFO2SxNlQlV1OfsgmgtREpKMWPfj12HLvKx4y_D1wJk9jUnTjGAH3jAHoGQ97DHQHwcePxEvvEujImYXJwC9ByGlvshYlgdbik5kI8-wdswbjFEj3Ssn9P9AlL7boIhThvejpGu2FkHPeH173nJ3p8e3x6es-Xr4uVhvsycliZmUhRQltWq0EpDbbQuqmLVNLIBY3ThEFdKgHamrNOQCWsqaJ3RbdG0WFWVvmR3x9601G5CinbjyWHfw4DjRFbVda1FrRJojuDhkxSws9vgNxD2Vgp78G3X9s-3Pfi2UtnkOwVvf18ActB3yYPz9J82RsqyKvUPyJKFBg</recordid><startdate>20050301</startdate><enddate>20050301</enddate><creator>LIM, J. 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D</au><au>CHOI, W. J</au><au>HAN, I. K</au><au>CHO, W. J</au><au>LEE, J. I</au><au>KIM, T. W</au><au>KIM, H. S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots</atitle><jtitle>Journal of crystal growth</jtitle><date>2005-03-01</date><risdate>2005</risdate><volume>275</volume><issue>3-4</issue><spage>415</spage><epage>421</epage><pages>415-421</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The effect of InxGal-xAs (x = 0.1, 0.2) asymmetric strain release layers (ASRLs) on the microstructural and the interband transition properties of InAs/GaAs quantum dots (QDs) grown by using molecular beam epitaxy (MBE) and atomic layer epitaxy was investigated by using high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) measurements. When the thickness of the ASRL covering the QDs was increased in the range between 0 and 5 nm, the PL peak corresponding to the interband transitions shifted to longer wavelengths due to strain relaxation. However, when the thickness of the ASRL was increased above approximately 7 nm, the peak shifted to shorter wavelengths due to the local interdiffusion of In and Ga atoms between the InxGa1-xAs capping layer and the InAs QDs as a result of the localized strains in the InxGa1-xAs capping layer and the InAs QDs. These results provide important information on the tunable feasibility of the interband transitions in the TnAs/GaAs QDs utilizing the InxGa1-xAs capping layer.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.jcrysgro.2004.12.015</doi><tpages>7</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Iii-v semiconductors Materials science Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Quantum dots |
| title | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots |
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