Temperature dependence of the phase manipulation feasibility between c(4 × 2) and p(2 × 2) on the Si(1 0 0) surface
Previously, we have reported that it is possible to manipulate the Si(1 0 0) surface phases between c(4 × 2) and p(2 × 2) by precise sample bias control in scanning tunneling microscopy (STM). Electron injection into the surface from the STM tip is responsible for the phase manipulation. In the pres...
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| Veröffentlicht in: | Surface science 2004-09, Vol.566 (2), p.767-771 |
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| creator | Sagisaka, Keisuke Fujita, Daisuke Kido, Giyuu Koguchi, Nobuyuki |
| description | Previously, we have reported
that it is possible to manipulate the Si(1
0
0) surface phases between c(4
×
2) and p(2
×
2) by precise sample bias control in scanning tunneling
microscopy (STM). Electron injection into the surface from the STM tip is responsible for the phase manipulation. In the present study, the phase manipulation by STM is thoroughly studied in a wide range of temperature from 4.2 to 100 K. We have found
that the manipulation is feasible below 40 K but not above 40 K. This temperature dependence is quite similar to the recent result observed by low-energy electron diffraction (LEED), which was viewed as an order–disorder phase transition of the Si(1
0
0) surface below 40 K. From the similarity of both phenomenon occurring at 40 K, we conclude that the order–disorder phase transition is induced by energetic electron irradiation onto the Si(1
0
0) surface during the LEED analysis. |
| doi_str_mv | 10.1016/j.susc.2004.06.062 |
| format | Article |
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that it is possible to manipulate the Si(1
0
0) surface phases between c(4
×
2) and p(2
×
2) by precise sample bias control in scanning tunneling
microscopy (STM). Electron injection into the surface from the STM tip is responsible for the phase manipulation. In the present study, the phase manipulation by STM is thoroughly studied in a wide range of temperature from 4.2 to 100 K. We have found
that the manipulation is feasible below 40 K but not above 40 K. This temperature dependence is quite similar to the recent result observed by low-energy electron diffraction (LEED), which was viewed as an order–disorder phase transition of the Si(1
0
0) surface below 40 K. From the similarity of both phenomenon occurring at 40 K, we conclude that the order–disorder phase transition is induced by energetic electron irradiation onto the Si(1
0
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that it is possible to manipulate the Si(1
0
0) surface phases between c(4
×
2) and p(2
×
2) by precise sample bias control in scanning tunneling
microscopy (STM). Electron injection into the surface from the STM tip is responsible for the phase manipulation. In the present study, the phase manipulation by STM is thoroughly studied in a wide range of temperature from 4.2 to 100 K. We have found
that the manipulation is feasible below 40 K but not above 40 K. This temperature dependence is quite similar to the recent result observed by low-energy electron diffraction (LEED), which was viewed as an order–disorder phase transition of the Si(1
0
0) surface below 40 K. From the similarity of both phenomenon occurring at 40 K, we conclude that the order–disorder phase transition is induced by energetic electron irradiation onto the Si(1
0
0) surface during the LEED analysis.</description><subject>Scanning tunneling microscopy</subject><subject>Silicon</subject><subject>Surface relaxation and reconstruction</subject><subject>Surface structure, morphology, roughness, and topography</subject><issn>0039-6028</issn><issn>1879-2758</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqNkctKxTAQhoMoeLy8gKus5LjoMUnTNAE3It5AcKGuQy4TzKGnrUmr-CQ-kC9my3EtDj8MA98_MPMjdELJihIqzterPGa3YoTwFRGT2A5aUFmrgtWV3EULQkpVCMLkPjrIeU2m4qpaoPEZNj0kM4wJsIceWg-tA9wFPLwC7l9NBrwxbezHxgyxa3EAk6ONTRw-sYXhA6DFbsnx9xdmZ9i0HvdL9jtN-LzlKS4pJpic4TymYBwcob1gmgzHv_0QvdxcP1_dFQ-Pt_dXlw-F40wMRWUUq7y3oSKeURXK2tiKWlYGr5RynJcV564UlAMB4pgVdW25lUwaEDbI8hCdbvf2qXsbIQ96E7ODpjEtdGPWTErBJP8PyLmiVT2BbAu61OWcIOg-xY1Jn5oSPUeh13qOQs9RaCImscl0sTXBdOt7hKSzi_ObfUzgBu27-Jf9Bz4xkTM</recordid><startdate>20040920</startdate><enddate>20040920</enddate><creator>Sagisaka, Keisuke</creator><creator>Fujita, Daisuke</creator><creator>Kido, Giyuu</creator><creator>Koguchi, Nobuyuki</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>H8D</scope></search><sort><creationdate>20040920</creationdate><title>Temperature dependence of the phase manipulation feasibility between c(4 × 2) and p(2 × 2) on the Si(1 0 0) surface</title><author>Sagisaka, Keisuke ; Fujita, Daisuke ; Kido, Giyuu ; Koguchi, Nobuyuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-5a925ddbf50d219f37ab51b23fd999c443544c3614e0e0c2b677b4b828ae6bf83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Scanning tunneling microscopy</topic><topic>Silicon</topic><topic>Surface relaxation and reconstruction</topic><topic>Surface structure, morphology, roughness, and topography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sagisaka, Keisuke</creatorcontrib><creatorcontrib>Fujita, Daisuke</creatorcontrib><creatorcontrib>Kido, Giyuu</creatorcontrib><creatorcontrib>Koguchi, Nobuyuki</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><jtitle>Surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sagisaka, Keisuke</au><au>Fujita, Daisuke</au><au>Kido, Giyuu</au><au>Koguchi, Nobuyuki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependence of the phase manipulation feasibility between c(4 × 2) and p(2 × 2) on the Si(1 0 0) surface</atitle><jtitle>Surface science</jtitle><date>2004-09-20</date><risdate>2004</risdate><volume>566</volume><issue>2</issue><spage>767</spage><epage>771</epage><pages>767-771</pages><issn>0039-6028</issn><eissn>1879-2758</eissn><abstract>Previously, we have reported
that it is possible to manipulate the Si(1
0
0) surface phases between c(4
×
2) and p(2
×
2) by precise sample bias control in scanning tunneling
microscopy (STM). Electron injection into the surface from the STM tip is responsible for the phase manipulation. In the present study, the phase manipulation by STM is thoroughly studied in a wide range of temperature from 4.2 to 100 K. We have found
that the manipulation is feasible below 40 K but not above 40 K. This temperature dependence is quite similar to the recent result observed by low-energy electron diffraction (LEED), which was viewed as an order–disorder phase transition of the Si(1
0
0) surface below 40 K. From the similarity of both phenomenon occurring at 40 K, we conclude that the order–disorder phase transition is induced by energetic electron irradiation onto the Si(1
0
0) surface during the LEED analysis.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.susc.2004.06.062</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0039-6028 |
| ispartof | Surface science, 2004-09, Vol.566 (2), p.767-771 |
| issn | 0039-6028 1879-2758 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28862848 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Scanning tunneling microscopy Silicon Surface relaxation and reconstruction Surface structure, morphology, roughness, and topography |
| title | Temperature dependence of the phase manipulation feasibility between c(4 × 2) and p(2 × 2) on the Si(1 0 0) surface |
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