A method of fabricating metal-insulator-metal (MIM) capacitor in Cu/low- k backend interconnection process for RF application

To build Cu and low- k dielectric integrated MIM capacitor on standard CMOS silicon substrate for RFIC application, a Ta layer under the capacitor upper plate is necessary for preventing Cu diffusion into Si 3N 4 dielectric layer of capacitor. In the experiment, delamination was found after 1000 Å T...

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Veröffentlicht in:	Thin solid films 2006-05, Vol.504 (1), p.257-260
Hauptverfasser:	Yu, M.B., Ning, Jiang, Balakumar, S., Bliznetsov, V.N., Lo, G.Q., Balasubramanian, N., Kwong, D.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectric thin films Dielectrics, piezoelectrics, and ferroelectrics and their properties Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) MIM capacitor Passive devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon process Ta film delamination
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