A comparison of methods for simulating low dose-rate gamma ray testing of MOS devices

A radiation testing procedure is presented and experimentally verified in which a series of high-dose-rate irradiations, with 100 degrees C annealing under bias between irradiations, is used to simulate a continuous low-dose-rate irradiation. This approach can reduce low-dose-rate testing time by as...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1991-12, Vol.38 (6), p.1560-1566
Hauptverfasser:	Jenkins, W.C., Martin, R.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	426000 > Engineering-- Components, Electron Devices & Circuits-- (1990-) 661320 > Auroral, Ionospheric, & Magnetospheric Phenomena-- (1992-) Analytical models ANNEALING Applied sciences Appropriate technology CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CMOS technology Compound structure devices DOSE RATES Electronics ENGINEERING Exact sciences and technology Failure analysis HARDENING HEAT TREATMENTS INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY Laboratories MOS devices MOS TRANSISTORS PHYSICAL RADIATION EFFECTS RADIATION EFFECTS RADIATION HARDENING SATELLITES SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulated annealing SIMULATION Space technology System testing TEMPERATURE RANGE TEMPERATURE RANGE 0273-0400 K TESTING Time measurement TRANSISTORS 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A radiation testing procedure is presented and experimentally verified in which a series of high-dose-rate irradiations, with 100 degrees C annealing under bias between irradiations, is used to simulate a continuous low-dose-rate irradiation. This approach can reduce low-dose-rate testing time by as much as a factor of 100 with respect to actual low-dose-rate irradiations. The procedure also provides detailed information on the behavior of CMOS parts at low dose-rates which are of interest to many satellite systems.< >
ISSN:	0018-9499 1558-1578
DOI:	10.1109/23.124146