Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient
Carrier generation lifetime ( τ g) in strained-Si/SiGe has been investigated using capacitance transient method in MOS structure. Interface properties of thermally grown gate oxide on strained-Si/SiGe has been studied prior to transient capacitance measurements. Average midgap value of interface sta...
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| Veröffentlicht in: | Applied surface science 2004-03, Vol.224 (1), p.278-282 |
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| creator | Bera, L.K. Mathew, Shajan Balasubramanian, N. Braithwaite, G. Currie, M.T. Singaporewala, F. Yap, J. Hammond, R. Lochtefeld, A. Bulsara, M.T. Fitzgerald, E.A. |
| description | Carrier generation lifetime (
τ
g) in strained-Si/SiGe has been investigated using capacitance transient method in MOS structure. Interface properties of thermally grown gate oxide on strained-Si/SiGe has been studied prior to transient capacitance measurements. Average midgap value of interface state density (
D
it) extracted from quasi-static CV measurement is around 2×10
10 to 5×10
10
cm
−2
eV
−1 for both strained-Si and bulk-Si samples. The observed non-linear behavior of capacitance transient characteristics for strained-Si/SiGe heterostructure are due to the carrier confinement in the potential wells caused by virtue of the valence band and conduction band discontinuities. Generation lifetime in strained-Si and SiGe buffer layer estimated from the segments of Zerbst plot having different slopes. The value of generation lifetime in strained-Si, SiGe buffer and co-processed bulk-Si is ranges from 120 to 170
μs, 20 to 90
μs and 177
μs, respectively. |
| doi_str_mv | 10.1016/j.apsusc.2003.08.054 |
| format | Article |
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τ
g) in strained-Si/SiGe has been investigated using capacitance transient method in MOS structure. Interface properties of thermally grown gate oxide on strained-Si/SiGe has been studied prior to transient capacitance measurements. Average midgap value of interface state density (
D
it) extracted from quasi-static CV measurement is around 2×10
10 to 5×10
10
cm
−2
eV
−1 for both strained-Si and bulk-Si samples. The observed non-linear behavior of capacitance transient characteristics for strained-Si/SiGe heterostructure are due to the carrier confinement in the potential wells caused by virtue of the valence band and conduction band discontinuities. Generation lifetime in strained-Si and SiGe buffer layer estimated from the segments of Zerbst plot having different slopes. The value of generation lifetime in strained-Si, SiGe buffer and co-processed bulk-Si is ranges from 120 to 170
μs, 20 to 90
μs and 177
μs, respectively.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2003.08.054</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Band offset ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Generation lifetime ; Heterostructure ; Physics ; SiGe ; Strained-Si</subject><ispartof>Applied surface science, 2004-03, Vol.224 (1), p.278-282</ispartof><rights>2003 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c464t-f7e748aa8827ab377907d04bc6904bfd3e5e6302bdb5b0bb1783abb9f157d3c3</citedby><cites>FETCH-LOGICAL-c464t-f7e748aa8827ab377907d04bc6904bfd3e5e6302bdb5b0bb1783abb9f157d3c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2003.08.054$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>310,311,315,781,785,790,791,3551,23935,23936,25145,27929,27930,46000</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15540308$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bera, L.K.</creatorcontrib><creatorcontrib>Mathew, Shajan</creatorcontrib><creatorcontrib>Balasubramanian, N.</creatorcontrib><creatorcontrib>Braithwaite, G.</creatorcontrib><creatorcontrib>Currie, M.T.</creatorcontrib><creatorcontrib>Singaporewala, F.</creatorcontrib><creatorcontrib>Yap, J.</creatorcontrib><creatorcontrib>Hammond, R.</creatorcontrib><creatorcontrib>Lochtefeld, A.</creatorcontrib><creatorcontrib>Bulsara, M.T.</creatorcontrib><creatorcontrib>Fitzgerald, E.A.</creatorcontrib><title>Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient</title><title>Applied surface science</title><description>Carrier generation lifetime (
τ
g) in strained-Si/SiGe has been investigated using capacitance transient method in MOS structure. Interface properties of thermally grown gate oxide on strained-Si/SiGe has been studied prior to transient capacitance measurements. Average midgap value of interface state density (
D
it) extracted from quasi-static CV measurement is around 2×10
10 to 5×10
10
cm
−2
eV
−1 for both strained-Si and bulk-Si samples. The observed non-linear behavior of capacitance transient characteristics for strained-Si/SiGe heterostructure are due to the carrier confinement in the potential wells caused by virtue of the valence band and conduction band discontinuities. Generation lifetime in strained-Si and SiGe buffer layer estimated from the segments of Zerbst plot having different slopes. The value of generation lifetime in strained-Si, SiGe buffer and co-processed bulk-Si is ranges from 120 to 170
μs, 20 to 90
μs and 177
μs, respectively.</description><subject>Band offset</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Generation lifetime</subject><subject>Heterostructure</subject><subject>Physics</subject><subject>SiGe</subject><subject>Strained-Si</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqNkUFvFCEYhkmjSdfaf9ADF73NFAYY2ItJ09hqUtPD9k6A-VA2M8zKx5r030vdJt6MFzjwvC_J-xByxVnPGR-v97074BFDPzAmemZ6puQZ2XCjRaeUkW_IpmHbTgoxnJN3iHvG-NBeN2S5yW5-xoR0jTS4UhIU-h0yFFfTmumcItS0AE2ZYi0uZZi6XbrepXugP6BCWffHHP6w3x53d5-fkMayLq3r4EKqLgegLZcxQa7vydvoZoTL1_uCPLXE7Zfu4fH-6-3NQxfkKGsXNWhpnDNm0M4LrbdMT0z6MG7bGScBCkbBBj955Zn3XBvhvN9GrvQkgrggH0-1h7L-PAJWuyQMMM8uw3pEO7Rizpj-D3DQSo28gfIEhrIiFoj2UNLiyrPlzL44sHt7cmBfHFhmbHPQYh9e-x0GN8e2Q0j4N6uUZIKZxn06cdBG-dUUWAxtrwBTKhCqndb0749-A2v4oIU</recordid><startdate>20040315</startdate><enddate>20040315</enddate><creator>Bera, L.K.</creator><creator>Mathew, Shajan</creator><creator>Balasubramanian, N.</creator><creator>Braithwaite, G.</creator><creator>Currie, M.T.</creator><creator>Singaporewala, F.</creator><creator>Yap, J.</creator><creator>Hammond, R.</creator><creator>Lochtefeld, A.</creator><creator>Bulsara, M.T.</creator><creator>Fitzgerald, E.A.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20040315</creationdate><title>Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient</title><author>Bera, L.K. ; Mathew, Shajan ; Balasubramanian, N. ; Braithwaite, G. ; Currie, M.T. ; Singaporewala, F. ; Yap, J. ; Hammond, R. ; Lochtefeld, A. ; Bulsara, M.T. ; Fitzgerald, E.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c464t-f7e748aa8827ab377907d04bc6904bfd3e5e6302bdb5b0bb1783abb9f157d3c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Band offset</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Generation lifetime</topic><topic>Heterostructure</topic><topic>Physics</topic><topic>SiGe</topic><topic>Strained-Si</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bera, L.K.</creatorcontrib><creatorcontrib>Mathew, Shajan</creatorcontrib><creatorcontrib>Balasubramanian, N.</creatorcontrib><creatorcontrib>Braithwaite, G.</creatorcontrib><creatorcontrib>Currie, M.T.</creatorcontrib><creatorcontrib>Singaporewala, F.</creatorcontrib><creatorcontrib>Yap, J.</creatorcontrib><creatorcontrib>Hammond, R.</creatorcontrib><creatorcontrib>Lochtefeld, A.</creatorcontrib><creatorcontrib>Bulsara, M.T.</creatorcontrib><creatorcontrib>Fitzgerald, E.A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bera, L.K.</au><au>Mathew, Shajan</au><au>Balasubramanian, N.</au><au>Braithwaite, G.</au><au>Currie, M.T.</au><au>Singaporewala, F.</au><au>Yap, J.</au><au>Hammond, R.</au><au>Lochtefeld, A.</au><au>Bulsara, M.T.</au><au>Fitzgerald, E.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient</atitle><jtitle>Applied surface science</jtitle><date>2004-03-15</date><risdate>2004</risdate><volume>224</volume><issue>1</issue><spage>278</spage><epage>282</epage><pages>278-282</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>Carrier generation lifetime (
τ
g) in strained-Si/SiGe has been investigated using capacitance transient method in MOS structure. Interface properties of thermally grown gate oxide on strained-Si/SiGe has been studied prior to transient capacitance measurements. Average midgap value of interface state density (
D
it) extracted from quasi-static CV measurement is around 2×10
10 to 5×10
10
cm
−2
eV
−1 for both strained-Si and bulk-Si samples. The observed non-linear behavior of capacitance transient characteristics for strained-Si/SiGe heterostructure are due to the carrier confinement in the potential wells caused by virtue of the valence band and conduction band discontinuities. Generation lifetime in strained-Si and SiGe buffer layer estimated from the segments of Zerbst plot having different slopes. The value of generation lifetime in strained-Si, SiGe buffer and co-processed bulk-Si is ranges from 120 to 170
μs, 20 to 90
μs and 177
μs, respectively.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2003.08.054</doi><tpages>5</tpages></addata></record> |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Band offset Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Generation lifetime Heterostructure Physics SiGe Strained-Si |
| title | Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient |
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