Determination of the valence band offset and minority carrier lifetime in Ge-rich layers on relaxed-SiGe

Capacitance–voltage ( C– V) technique is used to investigate the electronic properties of Si 0.3Ge 0.7 hetero layers deposited on fully relaxed-Si 0.4Ge 0.6. This is a fast and nondestructive method to determine important electronic properties, such as, apparent doping concentration, SiGe layer thic...

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Veröffentlicht in:	Thin solid films 2006-05, Vol.504 (1), p.73-76
Hauptverfasser:	Chakraborty, S., Bera, M.K., Bhattacharya, S., Bose, P.K., Maiti, C.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Doping and impurity implantation in other materials Elements, oxides, nitrides, borides, carbides, chalcogenides, etc Exact sciences and technology Ge-rich SiGe Minority carrier lifetime Physics Structure of solids and liquids crystallography Valence band offset
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