Performance of gamma irradiated p-channel 6H-SiC MOSFETs: high total dose
We present the first observation of total dose effects of gamma-ray irradiation on enhancement mode 6H-SiC p-channel MOSFETs. The electrical characterization of these transistors was performed before and after irradiation up to a total dose of 10/sup 8/ rad (SiO/sub 2/) by measuring the drain-source...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2003-02, Vol.50 (1), p.194-200 |
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| creator | Kin Kiong Lee Ohshima, T. Itoh, H. |
| description | We present the first observation of total dose effects of gamma-ray irradiation on enhancement mode 6H-SiC p-channel MOSFETs. The electrical characterization of these transistors was performed before and after irradiation up to a total dose of 10/sup 8/ rad (SiO/sub 2/) by measuring the drain-source current (I/sub ds/) as a function of gate voltage (V/sub g/) and drain-source voltage (V/sub ds/). These transistors were compared to 6H-SiC n-channel MOSFETs. The p-channel devices remain fully functional up to 10/sup 6/ rad (SiO/sub 2/), while the n-channel devices are fully functional through 10/sup 8/ rad (SiO/sub 2/). We found that the generation of radiation-induced interface states in the n-channel transistors is substantially lower than that of the p-channel devices. |
| doi_str_mv | 10.1109/TNS.2002.807853 |
| format | Article |
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The electrical characterization of these transistors was performed before and after irradiation up to a total dose of 10/sup 8/ rad (SiO/sub 2/) by measuring the drain-source current (I/sub ds/) as a function of gate voltage (V/sub g/) and drain-source voltage (V/sub ds/). These transistors were compared to 6H-SiC n-channel MOSFETs. The p-channel devices remain fully functional up to 10/sup 6/ rad (SiO/sub 2/), while the n-channel devices are fully functional through 10/sup 8/ rad (SiO/sub 2/). We found that the generation of radiation-induced interface states in the n-channel transistors is substantially lower than that of the p-channel devices.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2002.807853</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Atomic measurements ; Devices ; Electric potential ; Hydrogen ; Integrated circuit technology ; Interface states ; Irradiation ; JFETs ; MOSFETs ; Neutrons ; Semiconductor devices ; Silicon carbide ; Silicon dioxide ; Substrates ; Transistors ; Voltage</subject><ispartof>IEEE transactions on nuclear science, 2003-02, Vol.50 (1), p.194-200</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2003</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c539t-940207df919f1bb1a29b40d9e13809c9fe85d5f93f8de063b64dfa1e1c81eedc3</citedby><cites>FETCH-LOGICAL-c539t-940207df919f1bb1a29b40d9e13809c9fe85d5f93f8de063b64dfa1e1c81eedc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1178710$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1178710$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kin Kiong Lee</creatorcontrib><creatorcontrib>Ohshima, T.</creatorcontrib><creatorcontrib>Itoh, H.</creatorcontrib><title>Performance of gamma irradiated p-channel 6H-SiC MOSFETs: high total dose</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>We present the first observation of total dose effects of gamma-ray irradiation on enhancement mode 6H-SiC p-channel MOSFETs. The electrical characterization of these transistors was performed before and after irradiation up to a total dose of 10/sup 8/ rad (SiO/sub 2/) by measuring the drain-source current (I/sub ds/) as a function of gate voltage (V/sub g/) and drain-source voltage (V/sub ds/). These transistors were compared to 6H-SiC n-channel MOSFETs. The p-channel devices remain fully functional up to 10/sup 6/ rad (SiO/sub 2/), while the n-channel devices are fully functional through 10/sup 8/ rad (SiO/sub 2/). We found that the generation of radiation-induced interface states in the n-channel transistors is substantially lower than that of the p-channel devices.</description><subject>Atomic measurements</subject><subject>Devices</subject><subject>Electric potential</subject><subject>Hydrogen</subject><subject>Integrated circuit technology</subject><subject>Interface states</subject><subject>Irradiation</subject><subject>JFETs</subject><subject>MOSFETs</subject><subject>Neutrons</subject><subject>Semiconductor devices</subject><subject>Silicon carbide</subject><subject>Silicon dioxide</subject><subject>Substrates</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0s9rVDEQB_AgFly3nj14CR709LaT5OUl400WawvVClvPIfsy6b7yfqzJ24P_fbOsIHiwPYWBzwyZ4cvYWwErIQAv7r5vVhJAriwYq9ULthBa20poY1-yBYCwFdaIr9jrnB9KWWvQC3b9g1Kc0uDHlvgU-b0fBs-7lHzo_EyB76t258eRet5cVZtuzb_dbi6_3OVPfNfd7_g8zb7nYcp0zs6i7zO9-fMu2c_i1lfVze3X6_Xnm6rVCufyB5BgQkSBUWy3wkvc1hCQhLKALUayOuiIKtpA0KhtU4foBYnWCqLQqiX7eJq7T9OvA-XZDV1uqe_9SNMhOwTRGFBGFfnhv1JiOYNB-zS0Vmkj4RnQoG7Ec6CuQdX109AgGGyOE9__Ax-mQxrLpR1KKW2tyspLdnFCbZpyThTdPnWDT7-dAHdMiSspcceUuFNKSse7U0dHRH-1MNaUNR4BZOK0zw</recordid><startdate>20030201</startdate><enddate>20030201</enddate><creator>Kin Kiong Lee</creator><creator>Ohshima, T.</creator><creator>Itoh, H.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope></search><sort><creationdate>20030201</creationdate><title>Performance of gamma irradiated p-channel 6H-SiC MOSFETs: high total dose</title><author>Kin Kiong Lee ; Ohshima, T. ; Itoh, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c539t-940207df919f1bb1a29b40d9e13809c9fe85d5f93f8de063b64dfa1e1c81eedc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Atomic measurements</topic><topic>Devices</topic><topic>Electric potential</topic><topic>Hydrogen</topic><topic>Integrated circuit technology</topic><topic>Interface states</topic><topic>Irradiation</topic><topic>JFETs</topic><topic>MOSFETs</topic><topic>Neutrons</topic><topic>Semiconductor devices</topic><topic>Silicon carbide</topic><topic>Silicon dioxide</topic><topic>Substrates</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kin Kiong Lee</creatorcontrib><creatorcontrib>Ohshima, T.</creatorcontrib><creatorcontrib>Itoh, H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kin Kiong Lee</au><au>Ohshima, T.</au><au>Itoh, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance of gamma irradiated p-channel 6H-SiC MOSFETs: high total dose</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2003-02-01</date><risdate>2003</risdate><volume>50</volume><issue>1</issue><spage>194</spage><epage>200</epage><pages>194-200</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>We present the first observation of total dose effects of gamma-ray irradiation on enhancement mode 6H-SiC p-channel MOSFETs. The electrical characterization of these transistors was performed before and after irradiation up to a total dose of 10/sup 8/ rad (SiO/sub 2/) by measuring the drain-source current (I/sub ds/) as a function of gate voltage (V/sub g/) and drain-source voltage (V/sub ds/). These transistors were compared to 6H-SiC n-channel MOSFETs. The p-channel devices remain fully functional up to 10/sup 6/ rad (SiO/sub 2/), while the n-channel devices are fully functional through 10/sup 8/ rad (SiO/sub 2/). We found that the generation of radiation-induced interface states in the n-channel transistors is substantially lower than that of the p-channel devices.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2002.807853</doi><tpages>7</tpages></addata></record> |
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| identifier | ISSN: 0018-9499 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Atomic measurements Devices Electric potential Hydrogen Integrated circuit technology Interface states Irradiation JFETs MOSFETs Neutrons Semiconductor devices Silicon carbide Silicon dioxide Substrates Transistors Voltage |
| title | Performance of gamma irradiated p-channel 6H-SiC MOSFETs: high total dose |
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