Characterization of Ge gradients in SiGe HBTs by AES depth profile simulation
We show that AES depth profiling extended by a simple profile simulation technique allows characterization of details in the Ge concentration gradients for SiGe hetero-bipolar transistors (HBTs). Using the mixing-roughness-information depth (MRI) model to simulate the experimental data allows us to...
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Veröffentlicht in: | Applied surface science 2004-03, Vol.224 (1), p.51-54 |
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creator | Krüger, Dietmar Penkov, Alexey Yamamoto, Yuji Goryachko, Andriy Tillack, Bernd |
description | We show that AES depth profiling extended by a simple profile simulation technique allows characterization of details in the Ge concentration gradients for SiGe hetero-bipolar transistors (HBTs). Using the mixing-roughness-information depth (MRI) model to simulate the experimental data allows us to reveal concentration steps with a precision of about ±2
at.% and small deviations from linear concentration gradients. The obtainable high lateral resolution of AES facilitates an application for process optimization and control in small microelectronic structures. |
doi_str_mv | 10.1016/j.apsusc.2003.08.027 |
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subjects | AES Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology CVD Epitaxy Exact sciences and technology Ge profiles HBT Physics SiGe:C |
title | Characterization of Ge gradients in SiGe HBTs by AES depth profile simulation |
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