Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy

Conductive atomic force microscopy was used to determine the electrical oxide thickness for five different silicon dioxide layers with thickness in the order of 1.6-5.04 nm. The electrical thickness results were compared with values determined by ellipsometry. A semi-analytical tunnelling current mo...

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Veröffentlicht in:	Applied surface science 2006-01, Vol.252 (6), p.2375-2388
Hauptverfasser:	FRAMMELSBERGER, Werner, BENSTETTER, Guenther, KIELY, Janice, STAMP, Richard
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Physics
Online-Zugang:	Volltext
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